Method of fabricating photo mask for organic light emitting display and photo mask so fabricated

1. A method of fabricating an organic light emitting display, comprising the steps of:

forming a light shielding layer on a transparent substrate;

coating the light shielding layer with electron beam resist;

performing exposure on the electron beam resist by a vector scan method in accordance with a specific pattern and using an electron beam having a predetermined accelerating voltage;

developing the exposed electron beam resist to form an electron beam resist pattern having the specific pattern;

etching the light shielding layer using the electron beam resist pattern as an etching mask; and

forming the specific pattern to have a shape corresponding to transistors included in a pixel of an organic light emitting display and elements which constitute a capacitor.

2. The method as claimed in claim 1 , comprised of the pixel of the organic light emitting display including six transistors and two capacitors.

3. The method as claimed in claim 1 , comprised of forming the specific pattern to have a shape corresponding to a pattern of one of a top electrode and a bottom electrode of a boosting capacitor provided in the pixel of the organic light emitting display.

4. The method as claimed in claim 1 , comprising the predetermined accelerating voltage of the electron beam being no less than 50keV.

5. In a method of fabricating an organic light emitting display, which includes providing pixels which include at least one transistor and at least one capacitor formed by a deposition process using a photo mask, a method of fabricating the photo mask, comprising the steps of:

forming a light shielding layer on a transparent substrate;

coating the light shielding layer with an electron beam resist;

performing exposure on the electron beam resist by a vector scan method in accordance with a specific pattern and using an electron beam having a predetermined accelerating voltage;

developing the exposed electron beam resist to form an electron beam resist pattern having the specific pattern; and

etching the light shielding layer using the electron beam resist pattern as an etching mask,

wherein the specific pattern has a shape corresponding to transistors included in a pixel of an organic light emitting display and elements which constitute a capacitor;

whereby adverse influence of critical dimension (CD) dispersion generated when the deposition process is performed using the photo mask is eliminated.

6. In the method as recited in claim 5 , wherein the pixel of the organic light emitting display includes six transistors and two capacitors.

7. In the method as recited in claim 5 , wherein the specific pattern has a shape corresponding to a pattern of one of a top electrode and a bottom electrode of a boosting capacitor provided in the pixel of the organic light emitting display.

8. In the method as recited in claim 7 , wherein the predetermined accelerating voltage of the electron beam is no less than 50keV.

9. In the method as recited in claim 6 , wherein the predetermined accelerating voltage of the electron beam is no less than 50keV.

10. In the method as recited in claim 5 , wherein the specific pattern has a shape corresponding to a pattern of one of a top electrode and a bottom electrode of a boosting capacitor provided in the pixel of the organic light emitting display.

11. In the method as recited in claim 10 , wherein the predetermined accelerating voltage of the electron beam is no less than 50keV.

12. In the method as recited in claim 5 , wherein the predetermined accelerating voltage of the electron beam is no less than 50keV.