Method of forming a sputtering target
View Patent ↗A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
1. A method of forming a sputtering target, comprising:
forming a sputtering layer comprising a first material which comprises an alkali-containing transition metal directly on a second material of a support structure, wherein
the second material does not negatively impact a performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell; and
the support structure comprises a hollow support tube backing structure and the sputtering layer comprises sodium containing molybdenum.
2. The method of claim 1 , wherein:
the support structure comprises a barrier layer comprising the second material formed on a backing structure of a third material that is different from the second material; and
the barrier layer is capable of blocking diffusion of atoms from the backing structure into the sputtering layer.
3. The method of claim 2 , wherein:
the barrier layer is formed between the sputtering layer and the backing structure.
4. The method of claim 3 , further comprising forming the barrier layer by depositing the second material onto the backing structure.
5. The method of claim 4 , wherein the depositing is done by sputtering or thermal spraying.
6. The method of claim 1 , wherein the support structure comprises a backing structure comprising the second material.
7. The method of claim 1 , wherein the first material comprises 0.5 to 10 wt % sodium, 0-50 wt % oxygen and balance molybdenum.
8. The method of claim 1 , wherein the sputtering layer comprises sodium and oxygen containing molybdenum.
9. The method of claim 1 , wherein the support structure further comprises a barrier layer formed between the sputtering layer and the backing structure.
10. The method of claim 9 , wherein the barrier layer comprises at least one of Nb, Cr and Mo.
11. A method of forming a sputtering target, comprising:
forming a sputtering layer comprising a first material which comprises an alkali-containing transition metal directly on a second material of a support structure, wherein:
the second material does not negatively impact a performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell; and
forming the sputtering layer comprises consolidating a powder mixture of sodium and molybdenum by a high temperature process at between 500-1500° C. on the support structure.