Semiconductor device and method for fabricating the same
View Patent ↗A semiconductor device which can prevent a deterioration in the electrical properties by preventing sputters generated by laser welding from adhering to a circuit pattern or a semiconductor chip and a method for fabricating such a semiconductor device are provided. A connection conductor is bonded to a copper foil formed over a ceramic by a solder and resin is injected to a level lower than a top of the connection conductor. Laser welding is then performed. After that, resin is injected. This prevents sputters generated by the laser welding from adhering to a circuit pattern or a semiconductor chip. As a result, a deterioration in the electrical properties can be prevented.
1. A semiconductor device comprising:
a circuit pattern formed over an insulating board;
a semiconductor chip bonded to a main surface of the circuit pattern;
a connection conductor which has an Ω-type shape whose two lower ends are bonded to the main surface of the circuit pattern;
a first insulating resin which exposes an upper-end welding portion of the connection conductor through a top of the first insulating resin and which covers the circuit pattern and the semiconductor chip,
wherein the upper-end welding portion and the top of the first insulating resin are parallel to the main surface of the circuit pattern; and
an external terminal which passes a main electric current through a main electrode of the semiconductor chip and which is bonded to the upper-end welding portion of the connection conductor.
2. The semiconductor device according to claim 1 , further comprising a second upper-layer insulating resin which is over the first insulating resin and which covers the exposed portion of the connection conductor and a portion of the external terminal.
3. The semiconductor device according to claim 1 , wherein:
the semiconductor chip includes one or more signal electrodes in addition to the main electrode; and
the first insulating resin covers at least one bonding wire, each bonding wire connecting only one of the one or more signal electrodes and signal terminals.
4. A semiconductor device comprising:
a circuit pattern formed over an insulating board;
a semiconductor chip bonded to a main surface of the circuit pattern;
a first connection conductor which has an Ω-type shape whose two lower ends are bonded to the main surface of the circuit pattern;
a first insulating resin which exposes an upper-end welding portion of the first connection conductor through a top surface of the first insulating resin and which covers the circuit pattern and the semiconductor chip,
wherein the upper-end welding portion and the top of the first insulating resin are parallel to the main surface of the circuit pattern;
an external terminal which passes a main electric current through a main electrode of the semiconductor chip; and
a second external connection conductor bonded to the external terminal and the upper-end welding portion of the first connection conductor.
5. The semiconductor device according to claim 4 , further comprising a second upper-layer insulating resin which is over the first insulating resin and which covers the exposed portion of the first connection conductor, a portion of the external terminal, and the second external connection conductor.
6. The semiconductor device according to claim 4 , wherein:
the semiconductor chip includes one or more signal electrodes in addition to the main electrode; and
the first insulating resin covers at least one bonding wire, each bonding wire connecting only one of the one or more signal electrodes and signal terminals.