System having avalanche effect light sensor with enhanced sensitivity
View Patent ↗The system includes a light-transmitting medium positioned on a base. The light-transmitting medium included a ridge and a slab region. The ridge extends upward from the slab region and defines a portion of a waveguide on the base. The waveguide is configured to guide a light signal through the device. The device also includes an avalanche effect light sensor positioned on the base and configured to detect the presence of the light signal. The light sensor includes a light-absorbing medium positioned on the ridge of the light-transmitting medium such that the light signal is coupled from the light-transmitting medium into the light-absorbing medium. The light-transmitting includes a charge layer located at an interface of the light-transmitting medium and the light-absorbing medium. A multiplication region is formed in the slab regions of the light-transmitting medium such that the multiplication region receives charge carriers from the charge layer during the operation of the light sensor.
1. An optical device, comprising:
a light-transmitting medium positioned on a base, the light-transmitting medium including a ridge and a slab region,
the ridge extending upward from the slab region and the ridge defining a portion of a waveguide on the base,
the waveguide being configured to guide a light signal through the light-transmitting medium;
an avalanche effect light sensor positioned on the base and configured to detect the light signal,
the light sensor including a light-absorbing medium positioned on the ridge of the light-transmitting medium and being positioned such that the ridge of the light-transmitting medium is between the base and the light-absorbing medium,
the light-absorbing medium being arranged such that the light signal is coupled from the light-transmitting medium into the light-absorbing medium,
a charge layer between the light-transmitting medium and the light-absorbing medium; and
a multiplication region in the slab region of the light-transmitting medium such that the multiplication region receives charge carriers from the charge layer during operation of the light sensor.
2. The device of claim 1 , further comprising:
a second doped region in the slab region of the light-transmitting medium and the multiplication region extending from the charge layer to the second doped region.
3. The device of claim 2 , wherein the second doped region extends into the light-transmitting medium from an upper surface of the light-transmitting medium and a lower surface of the light-transmitting medium is between the light-transmitting medium and the base.
4. The device of claim 3 , wherein the second doped region is spaced apart from the ridge.
5. The device of claim 4 , wherein the second doped region is spaced apart from the charge layer.
6. The device of claim 2 , wherein the charge layer is a doped region of the light-transmitting medium and the charge layer has a different type of dopant than the second doped region.
7. The device of claim 6 , wherein a concentration of dopant in the charge layer is less than a concentration of dopant in the second doped region.
8. The device of claim 1 , wherein the charge layer extends down the sides of the ridge and into the slab region.
9. The device of claim 8 , wherein the portion of the charge layer in the slab region extends out from under the ridge.
10. The device of claim 9 , further comprising:
a second doped region in the slab region of the light-transmitting medium, and
the multiplication region extending from the charge layer to the second doped region.
11. The device of claim 10 , wherein the second doped region is spaced apart from the charge layer.
12. The device of claim 1 , wherein the multiplication region is one of several multiplication regions in the slab region of the light-transmitting medium and at least two of the multiplication regions are positioned on opposing sides of the ridge.
13. The device of claim 1 , wherein the portion of the slab region located between the charge layer and the base excludes any doped regions.
14. The device of claim 1 , wherein a third doped region is located between the charge layer and the base,
the third doped region being spaced apart from the charge layer, and
the third doped region being a doped region of the light-transmitting medium.
15. The device of claim 1 , wherein the light sensor is positioned so as to receive the light signal from the waveguide and the light-absorbing medium is positioned on only a portion of the ridge of the light-transmitting medium.
16. The device of claim 15 , wherein the ridge of the light-transmitting medium has a length and the light-absorbing medium is positioned on only a portion of the ridge as a result of the light-absorbing medium being positioned on only a portion of the length of the ridge of the light-transmitting medium.
17. The device of claim 16 , wherein the waveguide is configured to guide the light signal between the light sensor and another optical component on the base.
18. The device of claim 17 , wherein the light-transmitting medium consists of silicon.
19. The device of claim 18 , wherein the light-transmitting medium serves as the multiplication region.
20. The device of claim 1 , wherein the base includes an optical insulator on a substrate, the optical insulator having a lower index of refraction than the light-transmitting medium,
the optical insulator is between the substrate and the light-transmitting medium and the optical insulator contacts the light-transmitting medium.