Magnetic garnet single crystal and optical element using same as well as method of producing single crystal
View Patent ↗The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula Bi x Na y Pb z M1 3-x-y-z Fe 5-w M2 w O 12 (M1 is at least one element selected from Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Ga, Al, In, Ti, Ge, Si and Pt, provided that 0.5<x≦2.0, 0<y≦0.8, 0≦z<0.01, 0.19≦3-x-y-z<2.5, and 0≦w≦1.6).
1. A method of producing a garnet single crystal comprising:
preparing a solution containing B, Na, and Bi, wherein:
a B blend ratio “x” (in mol %), a Na blend ratio “y” (in mol %), and a Bi blend ratio “z” (in mol %) satisfy the relations of:
0 <y /( y+z )≦0.41, and
0 <y /( y+z )≦0.0143 x+ 0.24;
dissolving in the solution containing B, Na, and Bi at least Fe, and optionally one or both of Ga and Al, at a blend ratio “r” of Fe, Ga, and Al of 9.0 mol % or more to 25.5 mol % or less; and then
growing a garnet single crystal using the solution;
wherein a thickness of the garnet single crystal is from 50 μm or more to 570 μm or less.
2. The method of producing a garnet single crystal according to claim 1 , wherein the blend ratio “x” is 2.0 mol % or more to 12.0 mol % or less.
3. The method of producing a garnet single crystal according to claim 1 , wherein:
the garnet single crystal is grown using the solution at a growth temperature of 600° C. or more to 900° C. or less.
4. The method of producing a garnet single crystal according to claim 1 , wherein:
the garnet single crystal is grown using the solution at a growth temperature “t” (° C.) satisfying the relation of 436+18.2r≦t≦555+18.2r.
5. The method of producing a garnet single crystal according to claim 4 , wherein the growth temperature “t” is 900° C. or less.
6. The method of producing a garnet single crystal according to claim 1 , wherein the solution is prepared in a crucible made of Au.
7. The method of producing a garnet single crystal according to claim 1 , wherein:
materials containing Na are charged and melted in a crucible made of Au to prepare a melt, and
the garnet single crystal is grown using the melt.
8. The method of producing a garnet single crystal according to claim 7 , wherein the garnet single crystal is grown at atmospheric pressure.
9. The method of producing a garnet single crystal according to claim 7 , wherein the garnet single crystal is a rare-earth iron garnet single crystal.