IP Library Granted Patent US 9,384,943
Granted Patent B2
US 9,384,943 · App. 12/807,852 · Granted Jul 5, 2016

Ion generating apparatus and method of removing a fluorine compound deposited in a source housing thereof

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Quick Facts
Patent No.
US 9,384,943
App. No.
12/807,852
Granted
Jul 5, 2016
Kind
B2
Abstract

Provided is an ion generating apparatus. The ion generating apparatus includes opposed electrodes connected to a high-frequency power supply, and hence, even in a case where a cathode filament is broken, hydride gas can be ionized to generate hydrogen ion. Thus, a fluorine compound deposited in a source housing is reduced in vacuum, and gas containing fluorine generated due to the above-mentioned reduction reaction is discharged with a vacuum pump.

Claims (23)

1. A method of removing a fluorine compound deposited in a source housing of an ion generating apparatus after a filament of the apparatus breaks during an ion implantation process using a fluorine compound gas,

the ion generating apparatus comprising:

a chamber;

a filament arranged within the chamber for generating thermal electrons;

a direct-current power supply connected in series to the filament;

a gas introduction port for introducing gas into the chamber;

an ion beam take-out port for taking out ions generated within the chamber to outside the chamber;

opposed electrodes provided at both ends of the filament and electrically connected in series with the filament, each of the electrodes being arranged between the direct-current power supply and the filament; and

a high-frequency power supply arranged in parallel to the direct-current power supply, the ion generating apparatus allowing connection between the direct-current power supply and the opposed electrodes and connection between the high-frequency power supply and the opposed electrodes to be selected with a switch,

the method comprising:

disconnecting the direct-current power supply from the opposed electrodes and connecting the opposed electrodes and the high-frequency power supply to each other after breakage of the filament;

introducing a hydride gas through the gas introduction port;

applying high frequency power to the opposed electrodes to ionize the hydride gas, to thereby generate hydrogen ions; and

discharging the hydrogen ions through the ion beam take-out port into the source housing, reducing the fluorine compound deposited within the source housing, and discharging gas containing generated fluorine with a vacuum pump,

whereby during ion implantation using fluorine compound gas, the deposited fluorine compound is removed through ionizing the hydride gas under a condition in which the filament is broken.

2. An ion generating apparatus having a source housing on which a fluorine compound deposits during use of the apparatus, comprising:

a chamber;

a filament arranged within the chamber for generating thermal electrons;

a direct-current power supply connected in series to the filament;

a gas introduction port for introducing gas into the chamber;

an ion beam take-out port for taking out ions generated within the chamber to outside the chamber;

opposed electrodes provided at both ends of the filament and electrically connected in series with the filament, each of which is arranged between the direct-current power supply and the filament; and

a high-frequency power supply arranged in parallel to the direct-current power supply, the ion generating apparatus allowing connection between the direct-current power supply and the opposed electrodes and connection between the high-frequency power supply and the opposed electrodes to be selected with a switch.

Assignments (3)
CHANGE OF NAME Recorded Mar 12, 2018
From: SII SEMICONDUCTOR CORPORATION
To: ABLIC INC.
Reel/Frame 045567/0927 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 10, 2016
From: SEIKO INSTRUMENTS INC.
To: SII SEMICONDUCTOR CORPORATION
Reel/Frame 038058/0892 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2010
From: TSURU, KIYOHIRO
To: SEIKO INSTRUMENTS INC.
Reel/Frame 025231/0936 →