IP Library Granted Patent US 8,723,199
Granted Patent B2
US 8,723,199 · App. 12/811,030 · Granted May 13, 2014

Radiation emitting body and method for producing a radiation-emitting body

Inventors: Franz Eberhard (Regensburg, DE); Reiner Windisch (Pettendorf, DE); Robert Walter (Parsberg, DE); Michael Schmal (Schmidmühlen, DE); Magnus Ahlstedt (Regensburg, DE)
Assignee: Osram Opto Semiconductor GmbH
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Quick Facts
Patent No.
US 8,723,199
App. No.
12/811,030
Granted
May 13, 2014
Kind
B2
Abstract

A radiation-emitting body comprising a layer sequence, having an active layer ( 10 ) for generating electromagnetic radiation, having a reflection layer ( 50 ), which reflects the generated radiation, and having at least one intermediate layer ( 40 ) arranged between the active layer ( 10 ) and the reflection layer ( 50 ). In this case, the active layer ( 10 ) has a roughening on an interface ( 15 ) directed toward the reflection layer ( 50 ), and the reflection layer ( 50 ) is substantially planar at an interface ( 45 ) directed toward the active layer ( 10 ). Also disclosed is a method for producing a radiation-emitting body, which involves forming a layer sequence on a substrate having an active layer ( 10 ) for generating electromagnetic radiation. In this case, the method comprises roughening an interface ( 15 ) on the active layer ( 10 ), and forming at least one intermediate layer ( 40 ) and a reflection layer ( 50 ).

Claims (23)

1. A radiation-emitting body comprising:

a layer sequence having an active layer for generating electromagnetic radiation, a reflection layer, which reflects the generated radiation, and at least one intermediate layer arranged between the active layer and the reflection layer,

wherein the active layer has a roughening on the interface directed toward the reflection layer;

wherein the reflection layer is substantially planar at an interface directed toward the active layer;

wherein the roughening comprises structure elements having a structure size;

wherein the structure size is equal to or greater than half of the wavelength of the generated electromagnetic radiation and less than or equal to double the wavelength of the generated electromagnetic radiation; and

wherein the wavelength of the generated electromagnetic radiation lies in a wavelength range between 50 nm and 1000 nm.

2. The radiation-emitting body as claimed in claim 1 , wherein the intermediate layer is transmissive to the generated radiation.

3. The radiation-emitting body as claimed in claim 1 , wherein the intermediate layer has a refractive index that is not equal to the refractive index of the active layer.

4. The radiation-emitting body as claimed in claim 1 , wherein the roughening comprises a lateral structuring with a multiplicity of projecting structure elements.

5. The radiation-emitting body as claimed in claim 1 , wherein the radiation-emitting body is a thin-film semiconductor body.

6. The radiation-emitting body as claimed in claim 1 , wherein the reflection layer contains a metal or is embodied as a metallic layer.

7. The radiation-emitting body as claimed in claim 1 , wherein the reflection layer directly adjoins the intermediate layer.

8. The radiation-emitting body as claimed in claim 1 , wherein the reflection layer is connected to the intermediate layer in a positively locking manner.

9. The radiation-emitting body as claimed in claim 1 , wherein the intermediate layer contains a dielectric material.

10. The radiation-emitting body as claimed in claim 1 , wherein the intermediate layer contains an electrically conductive material.

11. The radiation-emitting body as claimed in claim 1 , wherein the intermediate layer directly adjoins the active layer.

12. The radiation-emitting body as claimed in claim 1 , wherein the active layer is connected to the intermediate layer in a positively locking manner.

13. A method for producing a radiation-emitting body comprising the steps of:

forming a layer sequence on a substrate, having an active layer for generating electromagnetic radiation;

roughening an interface of the active layer, wherein the roughened interface comprises structure elements having a structure size; the structure size is equal to or greater than half of the wavelength of the generated electromagnetic radiation and less than or equal to double the wavelength of the generated electromagnetic radiation; and the wavelength of the generated electromagnetic radiation lies in a wavelength range between 50 nm and 1000 nm;

forming at least one intermediate layer; and

forming a reflection layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051467/0906 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2010
From: EBERHARD, FRANZ; WINDISCH, REINER; WALTER, ROBERT; SCHMAL, MICHAEL; AHLSTEDT, MAGNUS
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 025094/0580 →
Priority Claims (2)
DE 10 2007 062 790 · Dec 27, 2007 · national
DE 10 2008 024 517 · May 21, 2008 · national
Continuity (1)
Related Publication 20110198639A1 · Aug 18, 2011