IP Library Granted Patent US 8,632,874
Granted Patent B2
US 8,632,874 · App. 12/813,556 · Granted Jan 21, 2014

Dielectric materials, methods of forming subassemblies therefrom, and the subassemblies formed therewith

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Quick Facts
Patent No.
US 8,632,874
App. No.
12/813,556
Granted
Jan 21, 2014
Kind
B2
Abstract

A circuit subassembly, comprising a dielectric layer formed from a dielectric composition comprising, based on the total volume of the composition: about 15 to about 65 volume percent of a dielectric filler; and about 35 to about 85 volume percent of a thermosetting composition comprising: a poly(arylene ether), and a carboxy-functionalized polybutadiene or polyisoprene polymer.

Claims (48)

1. A circuit subassembly, comprising:

a core, wherein the core comprises

a core dielectric substrate layer having a first surface and an opposite second surface, wherein the composition of said core dielectric substrate layer is based on 1,2-polybutadiene, polytetrafluoroethylene, or a liquid crystal polymer; and

a first core wiring layer disposed on the first surface of the dielectric substrate layer; and

a dielectric layer having a thickness of about 5 to about 100 micrometers disposed on the first core wiring layer, wherein the dielectric layer is formed from a dielectric composition comprising, based on the total volume of the composition:

about 15 to about 65 volume percent of a dielectric filler; and

about 35 to about 85 volume percent of a thermosetting composition comprising:

an unmodified poly(arylene ether), and

a carboxy-functionalized polybutadiene or polyisoprene polymer.

2. The circuit subassembly of claim 1 , wherein the dielectric filler in present in an amount of about 30 to about 60 volume percent of the dielectric composition and the thermosetting composition comprises 30 to 50 weight percent of an unmodified poly(arylene ether), 20 to 40 weight percent of a carboxy-functionalized polybutadiene or polyisoprene polymer, and 20 to 40 weight percent of an elastomeric block copolymer.

3. The circuit subassembly of claim 1 , wherein the dielectric composition is halogen free and passes UL94 V0 testing in the absence of halogenated flame retardants.

4. The circuit subassembly of claim 1 , wherein the dielectric filler comprises at least one of silica, titania, magnesium hydroxide, strontium titanate, barium titanate, Ba 2 Ti 9 O 20 , boron nitride, aluminum nitride, and alumina.

5. The circuit subassembly of claim 1 , wherein the dielectric composition further comprises an additional poly(arylene ether) that is carboxy-functionalized.

6. The circuit subassembly of claim 5 , wherein the additional poly(arylene ether) is the reaction product of a poly(arylene ether) and a cyclic anhydride.

7. The circuit subassembly of claim 6 , wherein the additional poly(arylene ether) is the reaction product of a poly(arylene ether) and maleic anhydride.

8. The circuit subassembly of claim 1 , wherein the polybutadiene or polyisoprene polymer in the dielectric composition is the reaction product of a polybutadiene or polyisoprene polymer and a cyclic anhydride.

9. The circuit subassembly of claim 8 , wherein the polybutadiene or polyisoprene polymer is a maleinized polybutadiene-styrene or maleinized polyisoprene-styrene copolymer.

10. The circuit subassembly of claim 1 , wherein the dielectric composition comprises about 20 to about 89 wt % of the poly(arylene ether) and about 1 to about 80 wt % of the polybutadiene or polyisoprene polymer, each based on the combined weight of the poly(arylene ether) and the polybutadiene or polyisoprene polymer.

11. The circuit subassembly of claim 1 , wherein the dielectric composition further comprises an elastomeric block copolymer comprises units derived from an alkenyl aromatic compound and a conjugated diene.

12. The circuit subassembly of claim 11 , wherein the alkenyl aromatic compound is styrene and the conjugated diene is polybutadiene.

13. The circuit subassembly of claim 11 , wherein the elastomeric block copolymer is styrene-butadiene diblock copolymer, styrene-butadiene-styrene triblock copolymer, styrene-isoprene diblock copolymer, styrene-isoprene-styrene triblock copolymer, styrene-(ethylene-butylene)-styrene triblock copolymer, styrene-(ethylene-propylene)-styrene triblock copolymer, styrene-(ethylene-butylene) diblock copolymer, or a combination comprising at least one of the foregoing copolymers.

14. The circuit subassembly of claim 11 , wherein the block copolymer is a styrene-butadiene diblock copolymer, styrene-butadiene-styrene triblock copolymer, or a combination comprising at least one of the foregoing copolymers.

15. The circuit subassembly of claim 11 , wherein the block copolymer is a combination of styrene-butadiene diblock copolymer and styrene-butadiene-styrene triblock copolymer.

16. The circuit subassembly of claim 1 , wherein the core further comprises a second core wiring layer disposed on the second surface of the dielectric substrate layer, and a second dielectric layer is disposed on the second core wiring layer, wherein the second dielectric layer is formed from the dielectric composition.

17. The circuit subassembly of claim 1 , wherein the composition of the core dielectric substrate layer is based on a 1,2-polybutadiene resin.

18. The circuit subassembly of claim 1 , wherein the composition of the core dielectric substrate layer is based on polytetrafluoroethylene.

19. The circuit subassembly of claim 1 , wherein the composition of the core dielectric substrate layer is based on liquid crystal polymer.

20. A circuit subassembly, comprising:

a core, wherein the core comprises

a core dielectric substrate layer having a first surface and an opposite second surface, wherein the composition of said core dielectric substrate layer is based on 1,2-polybutadiene, polytetrafluoroethylene, or a liquid crystal polymer; and

a first core wiring layer disposed on the first surface of the dielectric substrate layer; and

multiple dielectric layers, including a first dielectric layer, having a thickness of about 5 to about 100 micrometers disposed on the first core wiring layer, wherein the dielectric layer is formed from a dielectric composition comprising, based on the total volume of the composition:

about 15 to about 65 volume percent of a dielectric filler; and

about 35 to about 85 volume percent of a thermosetting composition comprising:

an unmodified poly(arylene ether), and

a carboxy-functionalized polybutadiene or polyisoprene polymer;

wherein the dielectric composition further comprises 10 to 40 wt. % based on the total weight of the thermosetting composition, of an elastomeric block copolymer comprising units derived from an alkenyl aromatic compound and a conjugated diene.

21. A circuit subassembly, comprising:

a core, wherein the core comprises

a core dielectric substrate layer having a first surface and an opposite second surface, wherein the composition of said core dielectric substrate layer is based on 1,2-polybutadiene, polytetrafluoroethylene, or a liquid crystal polymer; and

a first core wiring layer disposed on the first surface of the dielectric substrate layer; and

multiple dielectric layers, including a first dielectric layer, having a thickness of about 5 to about 100 micrometers disposed on the first core wiring layer, wherein the dielectric layer is formed from a halogen free dielectric composition comprising, based on the total volume of the composition:

about 15 to about 65 volume percent of a dielectric filler; and

about 35 to about 85 volume percent of a thermosetting composition comprising:

an unmodified poly(arylene ether), and

a carboxy-functionalized polybutadiene or polyisoprene polymer;

wherein the dielectric composition further comprises 10 to 40 wt. % based on the total weight of the thermosetting composition, of an elastomeric block copolymer comprising units derived from an alkenyl aromatic compound and a conjugated diene; and

a first wiring layer disposed on the first dielectric layer.

Assignments (2)
SECURITY INTEREST Recorded Feb 20, 2017
From: ROGERS CORPORATION
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041757/0748 →
SECURITY INTEREST Recorded Jun 26, 2015
From: ROGERS CORPORATION
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 035985/0332 →