Organic light emitting device and method of manufacturing the same
View Patent ↗An organic light emitting device including a substrate on which an organic light emitting unit is formed, wherein the organic light emitting unit sequentially includes a first electrode, an organic layer, and a second electrode; and a passivation layer covering the substrate and the second electrode, and a method of manufacturing the organic light emitting device.
1. An organic light emitting device comprising:
a substrate on which an organic light emitting unit is disposed, wherein the organic light emitting unit sequentially comprising a first electrode, an organic layer, and a second electrode; and
a first and second passivation layers that are sequentially stacked and cover the substrate and the organic light emitting unit,
a first intermixed layer disposed between the substrate and the first passivation layer, the first intermixed layer comprising a component including the substrate, a component including the first passivation layer, and a component including implanted ions, and a second intermixed layer disposed between the first passivation layer and the second passivation layer, the second intermixed layer comprising a component including the first passivation layer, a component including the second passivation layer, and a component including implanted ions; and
in the first intermixed layer and the second intermixed layer, the concentration of the component of the first passivation layer and the concentration of the component of the second passivation layer gradually changing in directions extending from the first passivation layer and from the second passivation layer, respectively.
2. The organic light emitting device of claim 1 , wherein the component including implanted ions comprises one or more selected from the group consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), N 2 , and O 2 .
3. The organic light emitting device of claim 1 , wherein the first passivation layer and the second passivation layer comprise different components, and the components each independently comprises one selected from the group consisting of a metal, an oxide, a nitride, a nitric oxide, and any mixture thereof.
4. The organic light emitting device of claim 3 , wherein the metal comprises one or more of aluminum (Al), silver (Ag), ytterbium (Yb), silicon (Si), titanium (Ti), tungsten (W), zinc (Zn), magnesium (Mg), or nickel (Ni).
5. The organic light emitting device of claim 3 , wherein the oxide comprises one or more of MoO x where x=2-4, Al 2 O 3 , Sb 2 O 3 , BaO, CdO, CaO, Ce 2 O 3 , CoO, Cu 2 O, DyO, GdO, HfO 2 , La 2 O 3 , Li 2 O, MgO, NbO, NiO, Nd 2 O 3 , PdO, Sm 2 O 3 , ScO, SiO 2 , SrO, Ta 2 O 3 , TiO, WO 3 , VO 2 , YbO, Y 2 O 3 , ZnO, or ZrO.
6. The organic light emitting device of claim 3 , wherein the nitride comprises one or more of AlN, BN, NbN, SiN, TaN, TiN, VN, YbN, or ZrN.
7. The organic light emitting device of claim 3 , wherein the nitric oxide comprises SiON or AlON.
8. The organic light emitting device of claim 1 , wherein each of the first passivation layer and the second passivation layer has a light transmissivity in a range of about 90% to about 100%.
9. The organic light emitting device of claim 1 , wherein the substrate comprises one or more of glass, plastic, polymer, or metal.
10. The organic light emitting device of claim 1 , wherein the thickness of each of the first intermixed layer and the second intermixed layer is in a range of above 0 to about 6,000 nm.
11. The organic light emitting device of claim 1 , wherein the concentration of the component of the first passivation layer and the concentration of the component of the second passivation layer gradually decreasing in directions extending from the first passivation layer to the substrate and from the second passivation layer to the substrate, respectively.
12. An organic light emitting device, comprising:
a substrate on which an organic light emitting unit is formed, wherein the organic light emitting unit sequentially comprises a first electrode, an organic layer, and a second electrode;
a first passivation layer formed on the substrate and the organic light emitting unit;
ions implanted into the first passivation layer;
a second passivation layer formed on the first passivation layer;
ions implanted into the second passivation layer;
a first intermixed layer disposed between the substrate and the first passivation layer, wherein the first intermixed layer comprises a component including the substrate, a component including the first passivation layer, and a component including implanted ions;
a second intermixed layer disposed between the first passivation layer and the second passivation layer, wherein the second intermixed layer comprises a component including the first passivation layer, a component including the second passivation layer, and a component including implanted ions; and
in the first intermixed layer and the second intermixed layer, the concentration of the component of the first passivation layer and the concentration of the component of the second passivation layer gradually changing in directions extending from the first passivation layer and from the second passivation layer, respectively.
13. The device of claim 12 , wherein the first passivation layer and the second passivation layer are formed of different components, and the components each independently comprise one selected from the group consisting of a metal, an oxide, a nitride, a nitric oxide, and mixtures thereof.
14. The device of claim 13 , wherein the metal comprises one or more of Al, Ag, Yb, Si, Ti, W, Zn, Mg, or Ni.
15. The device of claim 13 , wherein the oxide comprises one or more of MoO x where x=2-4, Al 2 O 3 , Sb 2 O 3 , BaO, CdO, CaO, Ce 2 O 3 , CoO, Cu 2 O, DyO, GdO, HfO 2 , La 2 O 3 , Li 2 O, MgO, NbO, NbO, NiO, Nd 2 O 3 , PdO, Sm 2 O 3 , ScO, SiO 2 , SrO, Ta 2 O 3 , TiO, WO 3 , VO 2 , YbO, Y 2 O 3 , ZnO, or ZrO.
16. The device of claim 13 , wherein the nitride comprises one or more of AlN, BN, NbN, SiN, TaN, TiN, VN, YbN, or ZrN.
17. The device of claim 13 , wherein the nitric oxide comprises SiON or AlON.
18. The device of claim 12 , wherein each of the first passivation layer and the second passivation layer has a light transmissivity in a range of about 90% to about 100%.
19. The device of claim 12 , wherein the substrate is formed of one or more of glass, plastic, polymer, or metal.
20. The device of claim 12 , wherein the ion beams comprise one or more selected from the group consisting of He, Ne, Ar, Kr, Xe, N 2 , and O 2 .