IGZO-based oxide material and method of producing IGZO-based oxide material
The invention provides an IGZO-based oxide material and a method of producing the same, the IGZO-based oxide material being represented by a composition formula of In 2-x Ga x ZnO 4-δ , where 0.75<x<1.10 and 0<δ≦1.29161×exp(−x/0.11802)+0.00153, and being formed from a single phase of IGZO having a crystal structure of YbFe 2 O 4 .
1. An IGZO-based oxide material represented by a composition formula of In 2-x Ga x ZnO 4-δ , where 0.75<x<1.10 and 0<δ≦1.29161×exp(−x/0.11802)+0.00153, and formed from a single phase of IGZO having a crystal structure of YbFe 2 O 4 , wherein the IGZO-based oxide material has a value of resistivity of from 1×10 2 Ω·cm to 1×10 9 Ω·cm.
2. The IGZO-based oxide material according to claim 1 , wherein the IGZO-based oxide material is a semiconductor.
3. The IGZO-based oxide material according to claim 1 , wherein x in the composition formula satisfies 0.80≦x≦1.05.
4. The IGZO-based oxide material according to claim 3 , wherein x in the composition formula satisfies 0.80≦x≦1.00.
5. The IGZO-based oxide material according to claim 1 , wherein the IGZO-based oxide material has a carrier concentration of from more than 10 13 cm −3 to less than 10 17 cm −3 .
6. A method of producing the IGZO-based oxide material according to claim 1 , the method comprising annealing, in an oxygen-containing atmosphere, a mixed material including In, Ga and Zn, under conditions of a maximum annealing temperature of from 1200° C. to 1400° C. and an average rate of temperature decrease from the maximum annealing temperature to 300° C. of from 50° C./hr to 500° C./hr.
7. The method of producing the IGZO-based oxide material according to claim 5 , wherein the average rate of temperature decrease is from 100° C./hr to 200° C./hr.
8. The method of producing the IGZO-based oxide material according to claim 5 , wherein the maximum annealing temperature is from 1350° C. to 1400° C.
9. A method of producing the IGZO-based oxide material according to claim 1 , the method comprising:
producing an IGZO-based oxide represented by a composition formula of In 2-x Ga x ZnO 4-δ , where 0.75<x<1.10 and δ>0, and formed from a single phase of IGZO having a crystal structure of YbFe 2 O 4 ; and
controlling the range of δ in the composition formula of the IGZO-based oxide to 0<δ≦1.29161×exp(−x/0.11802)+0.00153 by subjecting the IGZO-based oxide to post-annealing in an oxidizing atmosphere that contains oxygen.