IP Library Granted Patent US 8,390,086
Granted Patent B2
US 8,390,086 · App. 12/815,590 · Granted Mar 5, 2013

Solar cell employing a nanowire

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Quick Facts
Patent No.
US 8,390,086
App. No.
12/815,590
Granted
Mar 5, 2013
Kind
B2
Abstract

One embodiment in accordance with the invention is a solar cell comprising a non-single crystal substrate; a nanowire grown from a surface of the non-single crystal substrate; and an electrode coupled to the nanowire, wherein the nanowire is electrically conductive and is for absorbing electromagnetic wave and generating a current.

Claims (32)

1. A solar cell comprising:

a non-single crystal substrate;

a nanowire grown from a surface of said non-single crystal substrate; and

an electrode coupled to a top of said nanowire, wherein said nanowire is electrically conductive and is for absorbing an electromagnetic wave and generating a current; and

wherein said non-single crystal substrate from which said nanowire is grown is electrically conductive, is coupled to a bottom of said nanowire, and provides an electrical contact at said bottom of said nanowire.

2. The solar cell of claim 1 , wherein said non-single crystal substrate comprises polycrystalline silicon.

3. The solar cell of claim 1 , wherein said non-single crystal substrate comprises amorphous silicon.

4. The solar cell of claim 1 , wherein said non-single crystal substrate comprises microcrystalline silicon.

5. A method for fabricating a solar cell, the method comprising:

growing a nanowire from a surface of a non-single crystal substrate; and

coupling an electrode to a top of said nanowire for conducting current,

wherein said nanowire is electrically conductive and for absorbing electromagnetic wave and generating a current; and

wherein said non-single crystal substrate from which said nanowire is grown is electrically conductive, is coupled to a bottom of said nanowire, and provides an electrical contact at said bottom of said nanowire.

6. The method of claim 5 , further comprising:

disposing an insulating material above said non-single crystal substrate.

7. The method of claim 5 , further comprising:

disposing a material above said non-single crystal substrate, said material selected from the group consisting of polycrystalline silicon, poly-crystal diamond and related carbon-based materials, amorphous silicon, and microcrystalline silicon,

wherein said nanowire is disposed above said material.

8. The method of claim 5 , wherein said nanowire comprises a material selected from the group consisting of a metal, a group III-V compound semiconductor material and related alloys, a group II-VI compound semiconductor material and related alloys, and a group IV semiconductor material and related alloys.

9. The method of claim 5 , further comprising:

growing a plurality of nanowires above said non-single crystal substrate,

wherein each nanowire of said plurality of nanowires has a random orientation.

10. A photovoltaic solar cell, comprising:

a non-single crystal substrate;

a plurality of nanowires grown from a surface of said non-single crystal substrate, each said nanowire having a bottom end crystallographically attached to said non-single crystal substrate and a top end opposite said bottom end, said plurality of nanowires extending outwardly from said non-single crystal substrate at generally random angles, wherein each said nanowire has a photovoltaic property in which solar electromagnetic waves incident thereon are at least partially absorbed to cause electrical current to flow therethrough; and

an electrode coupled to said top end of each said nanowire of said plurality of nanowires; and

wherein said non-single crystal substrate from which said plurality of nanowires is grown is electrically conductive, is coupled to a bottom end of each said nanowire of said plurality of nanowires, and provides an electrical contact at said bottom end of each said nanowire of said plurality of nanowires.

11. The photovoltaic solar cell of claim 10 , wherein said non-single crystal substrate comprises at least one of polycrystalline silicon, amorphous silicon, and microcrystalline silicon.

12. The photovoltaic solar cell of claim 10 , wherein each said nanowire comprises a material selected from the group consisting of: a Group III-V compound semiconductor material, an alloy related to a Group III-V compound semiconductor material, a Group II-VI compound semiconductor material, and an alloy related to a Group II-VI compound semiconductor material.

13. The photovoltaic solar cell of claim 10 , further comprising an insulator material disposed between said non-single crystal substrate and said electrode such that it fills in gaps among said plurality of nanowires.

14. The photovoltaic solar cell of claim 10 , wherein said non-single crystal substrate is at least partially transparent such that incident solar electromagnetic waves can propagate therethrough to impinge upon the plurality of nanowires.

15. The photovoltaic solar cell of claim 10 , wherein said top ends of said nanowires are electrically connected to an external circuit through said electrode, and wherein said bottom ends of said nanowires are electrically connected to the external circuit through said non-single-crystal substrate, whereby said electrical current caused by absorption of said electromagnetic waves by said nanowires flows through said external circuit.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2021
From: OT PATENT ESCROW, LLC
To: VALTRUS INNOVATIONS LIMITED
Reel/Frame 055403/0001 →
PATENT ASSIGNMENT, SECURITY INTEREST, AND LIEN AGREEMENT Recorded Jan 26, 2021
From: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP; HEWLETT PACKARD ENTERPRISE COMPANY
To: OT PATENT ESCROW, LLC
Reel/Frame 055269/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2015
From: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
To: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Reel/Frame 037079/0001 →