Method for manufacturing semiconductor device
View Patent ↗A method for manufacturing a semiconductor device is disclosed in which, after semiconductor function regions and patterns of interlayer insulating films including required contact holes are formed on one main surface side of a semiconductor substrate, an aluminum film or an aluminum alloy film which is thick is formed all over the main surface side of the semiconductor substrate and brought into conductive contact with the surface of the semiconductor substrate including bottom surfaces of the contact holes so as to form a required electrode film. Formation of the aluminum film or the aluminum alloy film is divided into a plurality of steps so that the thickness of the aluminum film or the aluminum alloy film is formed gradually, and between every two of the plurality of steps of forming the aluminum film or the aluminum alloy film, there is provided a step of performing isotropic etching to flatten irregularities in a surface of the aluminum film or the aluminum alloy film formed in the previous step. The method for manufacturing a semiconductor device prevents the formation of voids in the surface of an Al electrode film on the surface side of a semiconductor substrate.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming semiconductor function regions and insulating film patterns on a main surface side of a semiconductor substrate, the insulating film patterns including required contact holes; and
forming an aluminum film or an aluminum alloy film with a film thickness of 0.5 μm or more all over the main surface side of the semiconductor substrate, and bringing the aluminum film or the aluminum alloy film into conductive contact with the semiconductor substrate surface including bottom surfaces of the contact holes so as to form an electrode film; wherein:
the step of forming the aluminum film or the aluminum alloy film is divided into a plurality of steps to form the thickness of the aluminum film or the aluminum alloy film gradually; and
after each step of forming the aluminum film or the aluminum alloy film, there is a step of performing isotropic etching to flatten irregularities in a surface of the aluminum film or the aluminum alloy film.
2. A method for manufacturing a semiconductor device according to claim 1 , wherein the isotropic etching is wet etching or dry etching using argon.
3. A method for manufacturing a semiconductor device according to claim 2 , wherein an etched thickness in the flattening step is less than 0.5 μm.
4. A method for manufacturing a semiconductor device according to claim 3 , wherein the aluminum film or the aluminum alloy film is in conductive contact with the semiconductor substrate surface including the bottom surfaces of the contact holes through a barrier metal film including laminated films of Ti and TiN.
5. A method for manufacturing a semiconductor device according to claim 2 , wherein the aluminum film or the aluminum alloy film is in conductive contact with the semiconductor substrate surface including the bottom surfaces of the contact holes through a barrier metal film including laminated films of Ti and TiN.
6. A method for manufacturing a semiconductor device according to claim 2 , further comprising the step of:
forming a nickel film on a surface of the aluminum film or the aluminum alloy film.
7. A method for manufacturing a semiconductor device according to claim 1 , wherein an etched thickness in the flattening step is less than 0.5 μm.
8. A method for manufacturing a semiconductor device according to claim 7 , wherein the aluminum film or the aluminum alloy film is in conductive contact with the semiconductor substrate surface including the bottom surfaces of the contact holes through a barrier metal film including laminated films of Ti and TiN.
9. A method for manufacturing a semiconductor device according to claim 7 , further comprising the step of:
forming a nickel film on a surface of the aluminum film or the aluminum alloy film.
10. A method for manufacturing a semiconductor device according to claim 1 , wherein the aluminum film or the aluminum alloy film is in conductive contact with the semiconductor substrate surface including the bottom surfaces of the contact holes through a barrier metal film including laminated films of Ti and TiN.
11. A method for manufacturing a semiconductor device according to claim 10 , further comprising the step of:
forming a nickel film on a surface of the aluminum film or the aluminum alloy film.
12. A method for manufacturing a semiconductor device according to claim 1 , further comprising the step of:
forming a nickel film on a surface of the aluminum film or the aluminum alloy film.