Optical modulator with three-dimensional waveguide tapers
View Patent ↗An integrated circuit that includes an optical waveguide defined in a semiconductor layer is described. In this integrated circuit, light is coupled between the optical waveguide and an optical modulator, which is disposed on the optical waveguide, using 3-dimensional (3-D) taper structures that are proximate to the ends of the optical modulator. The cross-sectional areas of these 3-D taper structures transition, over a distance, from that of the optical waveguide (distal from the optical modulator) to that of optical modulator (proximate to the ends of the optical modulator). In this way, a spatial extent of an optical mode in the optical waveguide and a spatial extent of the optical mode in the optical modulator may be approximately matched to reduce the optical loss when the light is coupled to or from the optical modulator.
1. An integrated circuit, comprising:
an optical waveguide defined in a semiconductor layer;
an optical modulator, having a first end and a second end, disposed on the optical waveguide, wherein a given end, which can be one of the first end and the second end, has a cross-sectional area having a first value; and
a first 3-dimensional (3-D) taper structure and a second 3-D taper structure that are, respectively, proximate to the first end and the second end, wherein at least one of the first and the second 3-D taper structure is disposed directly on the optical waveguide, wherein a height of the first 3-D taper structure and a height of the second 3-D taper structure proximate to the optical modulator approximately equal a height of the optical modulator, and wherein a cross-sectional area of a given 3-D taper structure, which can be one of the first 3-D taper structure and the second 3-D taper structure, increases from a second value distal to the given end to the first value proximate to the given end, thereby reducing optical-coupling loss by approximately matching a spatial extent of an optical mode in the optical waveguide and a spatial extent of an optical mode in the optical modulator.
2. The integrated circuit of claim 1 , wherein the semiconductor layer includes silicon.
3. The integrated circuit of claim 1 , wherein the taper of the given 3-D taper structure is in a plane of the optical waveguide.
4. The integrated circuit of claim 1 , wherein the taper of the given 3-D taper structure is in a plane of the optical waveguide and perpendicular to the plane.
5. The integrated circuit of claim 1 , further comprising:
a substrate; and
a buried-oxide layer disposed on the substrate, wherein the semiconductor layer is disposed on the buried-oxide layer.
6. The integrated circuit of claim 5 , wherein the substrate includes a semiconductor.
7. The integrated circuit of claim 5 , wherein the substrate, the buried-oxide layer and the semiconductor layer comprise a silicon-on-insulator technology.
8. The integrated circuit of claim 1 , wherein the optical modulator includes an electro-optic modulator.
9. The integrated circuit of claim 1 , wherein the optical modulator includes an electro-absorption modulator.
10. The integrated circuit of claim 1 , wherein the first 3-D taper structure and the second 3-D taper structure are included in the optical modulator.
11. A system, comprising an integrated circuit, wherein the integrated circuit includes:
an optical waveguide defined in a semiconductor layer;
an optical modulator, having a first end and a second end, disposed on the optical waveguide, wherein a given end, which can be one of the first end and the second end, has a cross-sectional area having a first value; and
a first 3-dimensional (3-D) taper structure and a second 3-D taper structure that are, respectively, proximate to the first end and the second end, wherein at least one of the first and the second 3-D taper structure is disposed directly on the optical waveguide, wherein a height of the first 3-D taper structure and a height of the second 3-D taper structure proximate to the optical modulator approximately equal a height of the optical modulator, and wherein a cross-sectional area of a given 3-D taper structure, which can be one of the first 3-D taper structure and the second 3-D taper structure, increases from a second value distal to the given end to the first value proximate to the given end, thereby reducing optical-coupling loss by approximately matching a spatial extent of an optical mode in the optical waveguide and a spatial extent of an optical mode in the optical modulator.
12. The system of claim 11 , wherein the semiconductor layer includes silicon.
13. The system of claim 11 , wherein the taper of the given 3-D taper structure is in a plane of the optical waveguide.
14. The system of claim 11 , wherein the taper of the given 3-D taper structure is in a plane of the optical waveguide and perpendicular to the plane.
15. The system of claim 11 , wherein the integrated circuit further comprises:
a substrate; and
a buried-oxide layer disposed on the substrate, wherein the semiconductor layer is disposed on the buried-oxide layer.
16. The system of claim 15 , wherein the substrate includes a semiconductor.
17. The system of claim 15 , wherein the substrate, the buried-oxide layer and the semiconductor layer comprise a silicon-on-insulator technology.
18. The system of claim 11 , wherein the first 3-D taper structure and the second 3-D taper structure are included in the optical modulator.
19. A method for selectively optically modulating an optical signal in an integrated circuit, comprising:
conveying the optical signal in an optical waveguide disposed in a semiconductor layer in the integrated circuit;
approximately matching a spatial extent of an optical mode in the optical waveguide and a spatial extent of an optical mode in an optical modulator, which is disposed on the semiconductor layer, using a 3-D taper structure to reduce optical-coupling loss, wherein the 3-D taper structure is disposed directly on the optical waveguide and is proximate to an end of the optical modulator, wherein the 3-D taper structure has a height proximate to the optical modulator that approximately equals a height of the optical modulator, and wherein a cross-sectional area of the 3-D taper structure increases from a first value distal to the end to a second value proximate to the end, which approximately equals a cross-sectional area of the optical modulator;
optically coupling the optical signal to the optical modulator; and
selectively optically modulating the optical signal in the optical modulator based on an modulation signal.
20. The integrated circuit of claim 1 , wherein the at least one of the first and the second 3-D taper structure that is disposed directly on the optical waveguide is disposed directly on a top surface of the optical waveguide without other layers in-between.