MANUFACTURING METHOD FOR THIN FILM TYPE LIGHT ABSORBING LAYER, MANUFACTURING METHOD FOR THIN FILM SOLAR CELL USING THEREOF AND THIN FILM SOLAR CELL
Disclosed is a manufacturing method for a thin film type light absorbing layer of a solar cell. The manufacturing method for a light absorbing layer includes: filling CIGS crystal powder in an evaporation source of a chamber; simultaneously evaporating the CIGS crystal powder; and depositing the evaporated CIGS crystal powder on a substrate to form a CIGS thin film.
1 . A manufacturing method for a thin film type light absorbing layer, comprising:
filling CIGS crystal powder in an evaporation source of a chamber;
simultaneously evaporating the CIGS crystal powder; and
depositing the evaporated CIGS crystal powder on a substrate to form the CIGS thin film.
2 . The manufacturing method for a thin film type light absorbing layer according to claim 1 , further comprising:
after forming the CIGS thin film, evaporating selenium metal powder and then performing a selenization process on the CIGS thin film.
3 . The manufacturing method for a thin film type light absorbing layer according to claim 1 , wherein the CIGS crystal powder has a diameter of 10 nm to 2 μm.
4 . The manufacturing method for a thin film type light absorbing layer according to claim 1 , wherein the CIGS crystal powder has a composition ratio of copper:indium:gallium:selenium of 1:(1−x):x:y, wherein x represents a real number of more than 0 to less than 1 and y represents a real number of 1 to 3.
5 . The manufacturing method for a thin film type light absorbing layer according to claim 1 , wherein the CIGS thin film is formed on the substrate at a thickness of 100 nm to 3 μm.
6 . The manufacturing method for a thin film type light absorbing layer according to claim 1 , wherein the simultaneously evaporating the CIGS crystal powder includes:
heating the substrate while maintaining the chamber in a vacuum state; and
evaporating the CIGS crystal powder by heating the evaporation source.
7 . The manufacturing method for a thin film type light absorbing layer according to claim 6 , wherein the evaporation source is heated at 1000 to 1400°.
8 . The manufacturing method for a thin film type light absorbing layer according to claim 1 , further comprising:
forming an electrode layer on the substrate prior to forming the CIGS thin film, the CIGS thin film being formed on the electrode layer.
9 . A manufacturing method for a thin film solar cell, comprising:
forming a back electrode layer on one surface of the substrate;
forming a thin film type light absorbing layer by evaporating and depositing CIGS crystal powder on the rear electrode layer;
forming a buffer layer on the thin film type light absorbing layer; and
forming a window layer on the buffer layer.
10 . The manufacturing method for a thin film solar cell according to claim 9 , wherein the forming the thin film type light absorbing layer includes:
filling the CIGS crystal powder in an evaporation source of a chamber;
simultaneously evaporating the CIGS crystal powder; and
depositing the evaporated CIGS crystal powder on the back electrode layer to form the thin film type light absorbing layer.
11 . The manufacturing method for a thin film solar cell according to claim 10 , further comprising:
after forming the thin film type light absorbing layer, evaporating the selenium metal powder and then performing a selenization process on the thin film type light absorbing layer.
12 . The manufacturing method for a thin film type light absorbing layer according to claim 10 , wherein the CIGS crystal powder has a diameter of 10 nm to 2 μm.
13 . The manufacturing method for a thin film type light absorbing layer according to claim 10 , wherein the CIGS crystal powder has a composition ratio of copper:indium:gallium:selenium of 1:(1−x):x:y, wherein x represents a real number of more than 0 to less than 1 and y represents a real number of 1 to 3.
14 . The manufacturing method for a thin film type light absorbing layer according to claim 10 , wherein the thin film type light absorbing layer is formed on the back electrode layer at a thickness of 100 nm to 3 μm.
15 . The manufacturing method for a thin film type light absorbing layer according to claim 9 , further comprising forming an anti-reflective layer on the window layer.
16 . The manufacturing method for a thin film type light absorbing layer according to claim 9 , further comprising forming a front electrode layer on the window layer.
17 . A thin film solar cell according, comprising:
a back electrode layer that is formed on one surface of a substrate;
a thin film type light absorbing layer that is formed by evaporating and depositing the CIGS crystal powder on the back electrode layer;
a buffer layer that is formed on the thin film type light absorbing layer, and
a window layer that is formed on the buffer layer.
18 . The thin film solar cell according to claim 17 , further comprising a front electrode layer formed on the window layer.
19 . The thin film solar cell according to claim 17 , wherein the substrate is one of soda ash glass substrate, a stainless metal substrate, and a polymide polymer substrate.