Inspection method for patterning of photoresist
View Patent ↗A nozzle is moved while supplying a photoresist liquid from a slit. A photoresist layer is formed on a film. A resist pattern which covers a portion of the film is formed from the photoresist layer by photolithography. Inspection of the resist pattern is performed. The photolithography includes an exposure which is performed so as to transfer a latent image to the photoresist layer, and a development of the photoresist layer which is performed so as to leave the latent image. The latent image contains a dummy latent image which extends in an unbroken manner parallel to the longitudinal direction of the slit. The resist pattern contains a dummy resist formed correspondingly to the dummy latent image. The inspection of the resist pattern includes the detection of the presence or non-presence of a cut in the dummy resist in the longitudinal direction.
1. A method of inspecting a formed photoresist pattern comprising:
forming a photoresist layer on a film formed on a substrate by moving a nozzle in the direction perpendicular to the longitudinal direction of a slit of the nozzle relative to the substrate while supplying a photoresist liquid from the slit of the nozzle above the film;
forming a resist pattern which covers a portion of the film by patterning the photoresist layer by photolithography; and
inspecting the resist pattern, wherein
the photolithography includes an exposure which is performed so as to transfer a latent image to the photoresist layer, and a development of the photoresist layer which is performed so as to leave the latent image,
the latent image contains a dummy latent image which is formed in directions parallel to and perpendicular to the longitudinal direction of the slit including a portion which extends in an unbroken manner parallel to the longitudinal direction of the slit,
the resist pattern contains a dummy resist formed correspondingly to the dummy latent image, and
the step of inspecting the resist pattern includes the detection of the presence or non-presence of a cut in the dummy resist in the longitudinal direction.
2. The method of inspecting a formed photoresist pattern according to claim 1 , wherein the plurality of dummy latent images are set to be arranged in a row parallel to the longitudinal direction of the slit in the exposure.
3. The method of inspecting a formed photoresist pattern according to claim 2 , wherein a region of the latent image excluding the plurality of dummy latent images contains a plurality of cell regions,
each one of the plurality of cell regions includes an element latent image corresponding to a circuit element, and
the exposure is performed such that one dummy latent image is positioned adjacent to one cell region.
4. The method of inspecting a formed photoresist pattern according to claim 1 , wherein the exposure is performed so as to transfer the dummy latent image to an edge portion of the photoresist layer positioned on an upstream side in the relative moving direction of the nozzle.
5. The method of inspecting a formed photoresist pattern according to claim 1 , wherein the step of inspecting the resist pattern includes imaging of the dummy resist by a camera, and
the imaging is performed by moving the camera relatively in the longitudinal direction of the dummy resist by moving at least one of the camera and the substrate.