IP Library Granted Patent US 8,023,353
Granted Patent B2
US 8,023,353 · App. 12/818,956 · Granted Sep 20, 2011

Semiconductor memory device, refresh control method thereof, and test method thereof

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Quick Facts
Patent No.
US 8,023,353
App. No.
12/818,956
Granted
Sep 20, 2011
Kind
B2
Abstract

The present invention provides a semiconductor memory device which reduces current consumption in a standby state owing to a suitable refresh-thinning-out function, and a refresh control method thereof. When the refresh-thinning-out function is added while a refresh operation and an external access operation are being executed independently of each other, a refresh address counter outputs a refresh address Add(C) and inputs predetermined high-order bits thereof to a refresh-thinning-out control as a high-order refresh address Add(C) (m), where judgment as to whether the refresh operation is performed, is made. A refresh permission signal RFEN corresponding to the result of judgment is inputted to a word driver to activate and control the word driver. The process of judgment by the refresh-thinning-out control circuit can be embedded in an access time of a row system.

Claims (5)

1. A semiconductor memory device for sequentially selecting target word lines according to refresh request signals to thereby perform refresh operations, comprising:

a refresh-thinning-out controller section for judging an execution of the refresh operation either per each of the refresh request signals or per some of the refresh request signals based on whether or not the word line intended for the refresh operation according to each of the refresh request signals is connected with at least one of the memory cells being beyond predetermined data-holding characteristics; and

an output section activated upon testing and for outputting the result of judgment from the refresh-thinning-out controller section to the outside.

2. The semiconductor memory device according to claim 1 , further including a buffer section for propagating the result of judgment to the output section upon the testing.

3. The semiconductor memory device according to claim 1 , further including an address changer section for switching each of addresses inputted to the refresh-thinning-out controller section to a test address inputted from outside as an alternative to the corresponding address upon the testing.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2015
From: FUJITSU SEMICONDUCTOR LIMITED
To: SOCIONEXT INC.
Reel/Frame 035508/0337 →
CHANGE OF NAME Recorded Jun 28, 2010
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 024598/0854 →