Laser polishing of a back contact of a solar cell
View Patent ↗Provided herein are methods of polishing, cleaning and texturing back contacts of thin-film solar cells. According to various embodiments, the methods involve irradiating sites on the back contact with laser beams to remove contaminants and/or smooth the surface of the back contact. The back contact, e.g., a molybdenum, copper, or niobium thin-film, is smoothed prior to deposition of the absorber and other thin-films of the photovoltaic stack. In certain embodiments, laser polishing of the back contact is used to enhance the diffusion barrier characteristics of the back contact layer, with all or a surface layer of the back contact becoming essentially amorphous. In certain embodiments, the adhesion of the absorber layer is enhanced by the textured back contact and by the presence of the amorphous metal at the deposition surface.
1. A method of polishing a back contact of a thin-film photovoltaic stack, the method comprising:
providing a substrate having a back contact layer for a thin-film photovoltaic stack deposited thereon; and
polishing a front surface of the back contact layer by forming surface features in the front surface, wherein forming surface features comprises rastering one or more laser beams over the front surface.
2. The method of claim 1 wherein the back contact layer comprises a material selected from the group consisting of molybdenum, niobium, copper and silver.
3. The method of claim 1 wherein the back contact layer comprises molybdenum.
4. The method of claim 1 wherein the substrate is a metal foil.
5. The method of claim 1 wherein the substrate is a stainless steel foil.
6. The method of claim 1 further comprising depositing one or more thin-film layers configured to absorb solar energy on the back contact.
7. The method of claim 6 wherein the one or more thin-film layers comprise CIGS or CIS.
8. The method of claim 1 wherein rastering one or more laser beams over the front surface comprises increasing the amorphous character of the back contact layer.
9. The method of claim 1 wherein the substrate is providing as a web and wherein polishing a front surface of the back contact layer comprises forming multiple rows of surface features in the front surface, wherein forming a row of surface features comprises rastering one or more laser beams over the front surface in a cross-web direction.
10. The method of claim 9 wherein the surface features of a row overlap with the surface features of each adjacent row.
11. The method of claim 1 wherein the back contact is about 0.5 microns thick.
12. The method of claim 1 wherein the back contact is between about 1 and 5 microns thick.
13. The method of claim 1 wherein the surface of the web substrate is not laser polished prior to deposition of the back contact layer.
14. The method of claim 1 further comprising laser polishing the surface of the web substrate prior to the deposition of the back contact layer.
15. A method of polishing a back contact of a thin-film photovoltaic stack, the method comprising:
providing a substrate having a back contact layer for a thin-film photovoltaic stack deposited thereon;
irradiating a front surface of the back contact layer with laser energy to heat the surface in localized areas of between 5 to 200 microns and form a plurality of shallow, rapidly expanding melt pools;
after forming the melt pools, cooling the front surface to form a smoothed surface.
16. The method of claim 15 wherein the irradiating the front surface with laser energy comprises exposing the front surface to laser beams at a rate of about 10-1000 kHz.
17. The method of claim 15 wherein the smoothed surface comprises interconnected surface features, said features having a frequency of 1-200 microns.
18. The method of claim 17 wherein the interconnected surface features have a maximum aspect ratio of no more than 1:1.
19. The method of claim 15 further comprising controlling the temperature of a back surface of the substrate during laser irradiation of the front surface of the back contact.
20. The method of claim 15 wherein the substrate is oriented at an angle of no more than 10° from vertical during the irradiation.