Method of fabricating landing plug with varied doping concentration in semiconductor device
A method of fabricating a landing plug in a semiconductor memory device, which in one embodiment includes forming a landing plug contact hole on a semiconductor substrate having an impurity region to expose the impurity region; forming a landing plug by filling the landing plug contact hole with a polysilicon layer, wherein the landing plug is divided into a first region, a second region, a third region, and a fourth region from a lower portion of the landing plug, and the first region is doped with a first doping concentration that is relatively lowest, the second region is doped with a second doping concentration that is higher than the first doping concentration, the third region is doped with a third doping concentration that is higher than the second doping concentration and the fourth region is not doped; and annealing the resulting product formed with the landing plug.
1. A method of fabricating a landing plug in a semiconductor memory device, comprising:
forming a landing plug contact hole on a semiconductor substrate having an impurity region to expose the impurity region;
forming a landing plug by filling the landing plug contact hole with a polysilicon layer, wherein the landing plug comprises a first region, a second region, a third region, and a fourth region, with the first region being disposed between the substrate and the second region and having a first doping concentration, the second region being disposed over the first region and under the third region and having a second doping concentration that is higher than the first doping concentration, the third region being disposed over the second region and under the fourth region and having a third doping concentration that is higher than the second doping concentration, and the fourth region being disposed over the third region and not being doped; and
annealing the resulting product formed with the landing plug.
2. The method of claim 1 , comprising forming the landing plug in a polysilicon depositing chamber with supply of a reaction gas for forming the polysilicon layer together with a source gas of impurity ions for doping the landing plug.
3. The method of claim 1 , comprising doping the landing plug using phosphorus (P) as an impurity.
4. The method of claim 1 , wherein the thickness of the first region comprises 5% to 10% of the total thickness of the landing plug, the thickness of the second region comprises 75% to 85% of the total thickness of the landing plug, the thickness of the third region comprises 5% to 10% of the total thickness of the landing plug, and the thickness of the fourth region comprises 5% or less of the total thickness of the landing plug.
5. The method of claim 1 , wherein the first doping concentration is 5.0E20 atoms/cm3 or less, the second doping concentration is 6.0E20 atoms/cm3 or more and is higher than the first doping concentration, and the third doping concentration is 7.0E20 atoms/cm3 or more and is higher than the second doping concentration.
6. The method of claim 1 , comprising annealing under a mixed atmosphere of oxygen and nitrogen.