Light-emitting device and manufacturing method thereof
View Patent ↗A method of fabricating a light emitting device comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface, forming a plurality of light emitting stack layers on the first major surface, forming an etching protection layer on the plurality of light emitting stack layers, forming a plurality of discontinuous holes or continuous lines on the substrate by a laser beam with the depth of 10˜150 μm, cleaving the substrate through the plurality of discontinuous holes or continuous lines, providing a adhesion layer on the second major surface of the substrate, and expanding the adhesion layer to form a plurality of separated light emitting device.
1. A method of fabricating a light emitting device comprising:
providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface;
forming a plurality of light emitting stack layers on the first major surface;
forming an etching protection layer on the plurality of light emitting stack layers;
forming a plurality of openings on the substrate by a laser beam with a depth of 10˜150 μm;
etching the plurality of openings with an etching solution in a temperature ranging from 100 to 300 degrees Celsius for a duration of about 10 to 50 minutes;
providing an adhesion layer on the second major surface of the substrate;
cleaving the substrate through the opening; and
expanding the adhesion layer to form a plurality of separated light emitting devices.
2. The method of fabricating a light emitting device of claim 1 , further comprising a step of removing the adhesion layer.
3. The method of fabricating a light emitting device of claim 1 , wherein the energy of the laser cab be 0.3˜0.6 W and the speed can be 2˜8 mm/sec.
4. The method of fabricating a light emitting device of claim 1 , wherein the step of forming a plurality of light emitting stack layers comprising:
forming a first conductive-type semiconductor layer on the first major surface of the substrate;
forming an active layer on the first conductive-type semiconductor layer;
forming a second conductive-type semiconductor layer on the active layer; and
performing photolithography and etching process to the first conductive-type semiconductor layer, the active layer, and the second conductive-type semiconductor layer to form a mesa structure in each of a plurality of light emitting stack layers.
5. The method of fabricating a light emitting device of claim 1 , wherein the etching process is made of by the solution of H 2 SO 4 and H 3 PO 4 with a concentration ratio 3:1 or is made of H 3 PO 4 only.
6. The method of fabricating a light emitting device of claim 1 , wherein the step of forming the openings comprises forming a plurality of discontinuous holes or continuous lines on the first major surface or the second major surface of the substrate.
7. The method of fabricating a light emitting device of claim 1 , further comprising a step of thinning the substrate.
8. A method of fabricating a light emitting device comprising:
providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface;
forming a plurality of light emitting stack layers on the first major surface;
forming an etching protection layer on the plurality of light emitting stack layers;
forming a plurality of openings on the substrate by a laser beam with a depth of 10˜150 μm; and
etching the plurality of openings with an etching solution in a temperature ranging from 100 to 300 degrees Celsius for a duration of about 10 to 50 minutes; and
cleaving the substrate through the plurality of openings.
9. The method of fabricating a light emitting device of claim 8 , wherein the energy of the laser cab be 0.3˜0.6 W and the speed can be 2˜8 mm/sec.
10. The method of fabricating a light emitting device of claim 8 , wherein the step of forming a plurality of light emitting stack layers comprising:
forming a first conductive-type semiconductor layer on the first major surface of the substrate;
forming an active layer on the first conductive-type semiconductor layer;
forming a second conductive-type semiconductor layer on the active layer; and
performing photolithography and etching process to the first conductive-type semiconductor layer, the active layer, and the second conductive-type semiconductor layer to form a mesa structure in each of a plurality of light emitting stack layers.
11. The method of fabricating a light emitting device of claim 8 , wherein the etching process is made of by the solution of H 2 SO 4 and H 3 PO 4 with a concentration ratio 3:1 or is made of H 3 PO 4 only.
12. The method of fabricating a light emitting device of claim 8 , wherein the step of forming a plurality openings comprises forming a plurality of discontinuous holes or continuous lines on the first major surface or the second major surface of the substrate.
13. The method of fabricating a light emitting device of claim 8 , further comprising a step of providing an adhesion layer on the second major surface of the substrate.
14. The method of fabricating a light emitting device of claim 13 , further comprising a step of expanding the adhesion layer to form a plurality of separated light emitting device.
15. The method of fabricating a light emitting device of claim 8 , further comprising a step of thinning the substrate.