Semiconductor device, ink cartridge, and electronic device
View Patent ↗A semiconductor device includes: a semiconductor substrate including an active element formation face on which an active element is formed; detection electrodes detecting a remaining amount of ink by being wet in the ink; an antenna transmitting and receiving information; a storage circuit storing information relating to the ink; and a control circuit controlling the detection electrodes, the antenna, and the storage circuit.
1. A semiconductor device comprising:
a semiconductor substrate including an active element formation face on which an active element and a first electrode electrically connected to the active element are formed;
a dielectric layer formed on the active element formation face;
detection electrodes detecting a remaining amount of ink by being wet in the ink, the detection electrodes being formed on the dielectric layer;
an antenna transmitting and receiving information, the antenna being formed on the dielectric layer;
a first interconnection connecting the first electrode and the detection electrodes, a part of the first interconnection being formed on the dielectric layer;
a storage circuit storing information relating to the ink; and
a control circuit controlling the detection electrodes, the antenna, and the storage circuit.
2. The semiconductor device according to claim 1 , further comprising:
a second electrode formed on the active element; and
a second interconnection connected to the second electrode, a part of the second interconnection being formed on the dielectric layer;
wherein the antenna is a part of the second interconnection.
3. The semiconductor device according to claim 1 , further comprising:
a protective film formed so as to cover the first interconnection; and
an opening formed in the protective film, exposing at least a part of the first interconnection, wherein
the detection electrodes are constituted by the part of the first interconnection exposed through the opening.
4. The semiconductor device according to claim 1 , further comprising:
a protective film formed so as to cover the first interconnection;
an opening formed in the protective film, exposing at least a part of the first interconnection; and
a bump formed on the first interconnection exposed through the opening, wherein
the detection electrodes are constituted by the bump.
5. The semiconductor device according to claim 1 , further comprising:
a plated layer formed on a surface of the detection electrodes.
6. The semiconductor device according to claim 1 , further comprising:
three or more detection electrodes.