Nanostructured layers, methods of making nanostructured layers, and application thereof

1. A nanostructure layer, comprising:

a first population of semiconductor nanocrystals forming electron transport conduits, the first population of semiconductor nanocrystals having first valence and conduction bands;

a second population of semiconductor nanocrystals forming hole transport conduits, the second population of semiconductor nanocrystals having second valence and conduction bands; and

a third population of semiconductor nanocrystals, the third population of semiconductor nanocrystals having third valence and conduction bands;

wherein the first, second, and third valence and conduction bands are each different and wherein the first, second, and third populations form an interpenetrated network.

2. The nanostructure layer of claim 1 , wherein the third population of semiconductor nanocrystals provide either exciton formation or recombination.

3. The nanostructure layer of claim 1 , wherein the ratio of the first population and second population is approximately 1:1.

4. The nanostructure layer of claim 1 , wherein the first population and second population comprise between 40% and 70% of the layer.

5. The nanostructure layer of claim 1 , wherein nanocrystals of the third population have a conduction band that is higher than a conduction band of nanocrystals of the first population and lower than a conduction band of nanocrystals of the second population, the nanocrystals of the third population further having a valence band that is lower than a valence band of nanocrystals of the second population and higher than a valence band of nanocrystals of the first population.

6. The nanostructure layer of claim 1 , wherein the first population and the second population have offset bandgaps, and the third population has a bandgap that is smaller than the bandgap of the first population and smaller than the bandgap of the second population.

7. The nanostructure layer of claim 1 , wherein the seimconductor nanocrystals of the third population are capable of absorbing electromagnetic radiation and creating pairs of electrons and holes, the electrons being transported to semiconductor nanocrystals of the first population and the holes being transported to semiconductor nanocrystals of the second population.

8. The nanostructure layer of claim 1 , wherein semiconductor nanocrystals of the third population are capable of absorbing light through a multiple exciton generation process.

9. The nanostructure layer of claim 1 , wherein semiconductor nanocrystals of the third population are capable of recombining electrons and holes transported from the first population and the second population of semiconductor nanocrystals to emit light of a specific wavelength.

10. The nanostructure of claim 9 , wherein the semiconductor nanocrystals of the third population have a conduction band lower than a conduction band of nanocrystals of the first population, the nanocrystals of the third population further having a valence band higher than a valence band of nanocrystals of the second population.

11. The nanostructure of claim 1 , wherein the semiconductor nanocrystals of the first population comprise CdSe, the semiconductor nanocrystals of the second population comprise CdTe, and the semiconductor nanocrystals of the third population comprise InP.

12. The nanostructure of claim 1 , wherein the semiconductor nanocrystals of the first, the second, and the third populations are selected from the group consisting of II-VI, III-V, IV-VI, and I-III-VI semiconductors.

13. The nanostructure layer of claim 1 , wherein the third population of semiconductor nanocrystals is capable of emitting light.