Guided acoustic wave resonant device and method for producing the device
View Patent ↗A guided acoustic wave resonant device is provided. The device comprises at least two filters (F 1 , . . . , F i , . . . , F N ), each filter comprising at least two acoustic wave resonators (R 11 -R 12 , . . . , R i1 -R i2 , . . . , R N1 -R N2 ), each filter having a useful frequency band (BF 1 , . . . , BF i , . . . , BF N ) centered on a central frequency (f 1 , . . . , f i , . . . , f N ), each resonator comprising at least one suite of inter-digitated upper electrodes exhibiting a periodic structure of period (Λ ij ) and a layer of piezoelectric material, each resonator having a coupling coefficient (k 2 1 , k 2 2 , . . . , k 2 n ) and a resonant frequency (fr 1 , . . . , f r2 , . . . , f N ), wherein at least one of the resonators comprises a differentiation layer (CDf i ) making it possible in combination with the period of the inter-digitated electrodes to modify the coupling coefficient of the said resonator, the useful band and the central frequency being determined by the resonant frequencies and the coupling coefficients of the resonators which are adapted so as to have a determined useful bandwidth.
1. A guided acoustic wave resonant device, comprising:
at least two filters, each filter comprising at least two acoustic wave resonators, each filter having a useful frequency band centered on a central frequency, the at least two central frequencies being different, each resonator comprising at least one suite of inter-digitated upper electrodes exhibiting a periodic structure having a period and a thin layer of piezoelectric material, each resonator having a coupling coefficient and a resonant frequency; and
at least one differentiation layer associated with at least one of the resonators of at least one of the at least two filters;
wherein the at least one differentiation layer includes differentiation layer associated with at least one of the resonators of one filter, such that the at least two acoustic wave resonators of said filter are positioned at the differentiation layer;
wherein the at least one differentiation layer makes it possible in combination with the period of the inter-digitated electrodes to modify the coupling coefficient of the associated resonator, the useful frequency band and the central frequency being determined by the resonant frequencies and the coupling coefficients of the resonators; and
wherein the coupling coefficients of the resonators are adapted so as to provide a determined useful bandwidth, and to make uniform the bandwidths of the useful frequency bands.
2. The device according to claim 1 , wherein the at least one differentiation layer of the associated resonator is used in combination with the period of the inter-digitated electrodes to modify the resonant frequency.
3. The device according to claim 1 , wherein the at least one differentiation layer is positioned on a surface of the associated resonator.
4. The device according to claim 1 , wherein the at least one differentiation layer is positioned between the associated resonator and a substrate.
5. The device according to claim 4 , wherein the resonators are produced on a surface of a common stack of layers ensuring a Bragg mirror function, wherein a Bragg mirror is defined on a surface of the substrate.
6. The device according to claim 5 , wherein the at least one differentiation layer belongs to one of the constituent layers of the stack of the Bragg mirror.
7. The device according to claim 1 , wherein the at least one differentiation layer comprises porous elements to modify the acoustic characteristics thereof.
8. The device according to claim 1 , wherein the at least one differentiation layer comprises structures exhibiting sub-micronic patterns to modify the acoustic characteristics thereof.
9. The device according to claim 1 , wherein at least one part of the resonators comprises several differentiation layers.
10. The device according to claim 1 , wherein the resonators further comprise a lower electrode.
11. The device according to claim 10 , wherein the lower electrode is a continuous electrode.
12. The device according to claim 10 , wherein the lower electrode is a comb of inter-digitated electrodes.
13. The device according to claim 1 , wherein the device comprises a membrane structure coupled to the resonators making it possible to create a gap capable of confining the acoustic waves in the piezoelectric material.