Nanoscale crystalline silicon powder
View Patent ↗An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m 2 /g is provided. The aggregated crystalline silicon may be doped with a doping component and can be used to produce electronic components.
1. An aggregated crystalline silicon powder, comprising lithium as a doping component;
wherein a proportion of lithium is up to 53 wt. %, and
a BET surface area of the aggregated crystalline silicon powder is from 20 to 150 m 2 /g.
2. An aggregated crystalline silicon powder, comprising germanium as a doping component; wherein a proportion of germanium is up to 40 wt. % and
a BET surface area of the aggregated crystalline silicon powder is from 20 to 150 m 2 /g.
3. An aggregated crystalline silicon powder, comprising at least one doping component selected from the group consisting of iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold and zinc;
wherein
a proportion of the at least one doping component is up to 5 wt. %, and
a BET surface area of the aggregated crystalline silicon powder is from 20 to 150 m 2 /g.
4. The aggregated crystalline silicon powder according to claim 2 , further comprising a hydrogen loading of up to 10 mol. %.
5. The aggregated crystalline silicon powder according to claim 3 , further comprising a hydrogen loading of up to 10 mol. %.
6. The aggregated crystalline silicon powder according to claim 1 , further comprising a hydrogen loading of up to 10 mol. %.