IP Library Granted Patent US 8,456,558
Granted Patent B2
US 8,456,558 · App. 12/829,807 · Granted Jun 4, 2013

Pixel circuit, a solid-state image sensing device, and a camera system that facilitates charge transfer within a pixel

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Quick Facts
Patent No.
US 8,456,558
App. No.
12/829,807
Granted
Jun 4, 2013
Kind
B2
Abstract

A pixel circuit includes: a photoelectric conversion device; a source-follower circuit; a transfer transistor that transfers charge generated in the photoelectric conversion device to an input node of the source-follower circuit; and a readout system that reads out a signal in response to the generated charge through the source-follower circuit, wherein the readout system floats the input node of the source-follower circuit and turns on the transfer transistor to transfer the signal charge to the input node, includes a function of turning off the transfer transistor, sensing an output node potential of the source-follower circuit, and reading out an output signal, and further includes an output modulation degree control function unit that temporarily reduces an output modulation degree of the source-follower circuit when the transfer transistor is turned on.

Claims (51)

1. A pixel circuit comprising:

a photoelectric conversion device;

a source-follower circuit;

a transfer transistor that transfers charge generated in the photoelectric conversion device to an input node of the source-follower circuit; and

a readout system that reads out a signal in response to the generated charge through the source-follower circuit,

wherein the readout system

floats the input node of the source-follower circuit and turns on the transfer transistor to transfer the signal charge to the input node,

includes a function of turning off the transfer transistor, sensing an output node potential of the source-follower circuit, and reading out an output signal, and

further includes an output modulation degree control function unit that temporarily reduces an output modulation degree, the output modulation degree being a potential, of the input node of the source-follower circuit when the transfer transistor is turned on.

2. The pixel circuit according to claim 1 , wherein the output modulation degree control function unit includes a clamp circuit, and

connects the clamp circuit to the output node of the source-follower circuit at reduction control of the output modulation degree.

3. The pixel circuit according to claim 1 , wherein the output modulation degree control function unit includes a switch device, and

connects the output node of the source-follower circuit to a constant-voltage source at least via the switch device at reduction control of the output modulation degree.

4. The pixel circuit according to claim 1 , wherein the output modulation degree control function unit floats the output node of the source-follower circuit at reduction control of the output modulation degree.

5. The pixel circuit according to claim 1 , wherein the output modulation degree control function unit connects an output node of another source-follower circuit to the output node of the source-follower circuit at reduction control of the output modulation degree.

6. The pixel circuit according to claim 1 , wherein the output modulation degree control function unit shorts output nodes of plural source-follower circuits respectively connected to different pixels via the transfer transistor with respect to one another at reduction control of the output modulation degree.

7. The pixel circuit according to claim 1 , wherein the photoelectric conversion devices and the transfer transistors are arranged in an array corresponding to the respective pixels and the corresponding source-follower circuits are arranged in an array, and

the output modulation degree control function unit controls a modulation degree of an output signal line shared among the plural source-follower circuits in a column direction at reduction control of the output modulation degree.

8. The pixel circuit according to claim 7 , wherein the output modulation degree control function unit includes a switch device, and

connects an output signal line of the source-follower circuit to a constant-voltage source at least via the switch circuit at reduction control of the output modulation degree.

9. The pixel circuit according to claim 7 , wherein the output modulation degree control function unit floats an output signal line of the source-follower circuit at reduction control of the output modulation degree.

10. A solid-state image sensing device comprising:

a pixel unit in which plural pixel circuits are arranged; and

a pixel drive unit that drives the pixel circuits of the pixel unit and reads out pixel signals,

wherein each pixel circuit includes

a photoelectric conversion device,

a source-follower circuit,

a transfer transistor that transfers charge generated in the photoelectric conversion device to an input node of the source-follower circuit, and

a readout system that reads out a signal in response to the generated charge through the source-follower circuit, and

wherein the readout system

floats the input node of the source-follower circuit and turns on the transfer transistor to transfer the signal charge to the input node,

includes a function of turning off the transfer transistor, sensing an output node potential of the source-follower circuit, and reading out an output signal, and

further includes an output modulation degree control function unit that temporarily reduces an output modulation degree, the output modulation degree being a potential, of the input node of the source-follower circuit when the transfer transistor is turned on.

11. The solid state image sensing device according to claim 10 , wherein the output modulation degree control function unit controls the modulation degree of an output signal line shared among plural source-follower circuits, including the source-follower circuit, in a column direction at reduction control of the output modulation degree.

12. A camera system comprising:

a solid-state image sensing device;

an optical system that forms a subject image on the solid-state image sensing device; and

a signal processing circuit that processes an output image signal of the solid-state image sensing device,

wherein the solid-state image sensing device includes

a pixel unit in which plural pixel circuits are arranged, and

a pixel drive unit that drives the pixel circuits of the pixel unit and reads out pixel signals,

wherein each pixel circuit includes

a photoelectric conversion device,

a source-follower circuit,

a transfer transistor that transfers charge generated in the photoelectric conversion device to an input node of the source-follower circuit, and

a readout system that reads out a signal in response to the generated charge through the source-follower circuit, and

wherein the readout system

floats the input node of the source-follower circuit and turns on the transfer transistor to transfer the signal charge to the input node,

includes a function of turning off the transfer transistor, sensing an output node potential of the source-follower circuit, and reading out an output signal, and

further includes an output modulation degree control function unit that temporarily reduces an output modulation degree, the output modulation degree being a potential, of the input node of the source-follower circuit when the transfer transistor is turned on.

13. The camera system according to claim 12 , wherein the output modulation degree control function unit controls a modulation degree of an output signal line shared among plural source-follower circuits, including the source-follower circuit, in a column direction at reduction control of the output modulation degree.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2016
From: SONY CORPORATION
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 040419/0001 →