PRESSURE SENSOR AND PRESSURE SENSOR MANUFACTURING METHOD

1 . A pressure sensor including a semiconductor substrate comprising:

an internal resistance portion,

an insulating layer formed on a top of the semiconductor substrate,

an external conducting portion that is formed on top of the insulating layer; and

a contact connecting electrically between the external conducting portion and the internal resistance portion formed in the insulating layer;

wherein the external conducting portion is formed in a range corresponding to the range wherein is formed the internal resistance portion on the semiconductor substrate.

2 . A pressure sensor including a semiconductor substrate comprising:

a plurality of internal resistance portions;

an insulating layer formed on a top of the semiconductor substrate;

a plurality of external conducting portions formed on a top of the insulating layer; and

a plurality of contacts connecting electrically between the external conducting portion and the internal resistance portion formed in the insulating layer;

wherein all of the plurality of external conducting portions are formed in ranges corresponding to the ranges wherein is formed the plurality of internal resistance portions on the semiconductor substrate.

3 . A pressure sensor as set forth in claim 1 , wherein:

the semiconductor substrate is an n-type semiconductor substrate;

an internal resistance portion is made from a p-type semiconductor; and

a voltage is applied so that those parts of the semiconductor substrate outside the internal resistance portion all at least one of the same electropotential or higher than that of the external conducting portion, and so that the potential difference formed between the internal resistance portion of the semiconductor substrate and those parts of the semiconductor substrate outside the internal resistance portion have less than a breakdown voltage.

4 . A pressure sensor as set forth in claim 1 , wherein:

the semiconductor substrate is a p-type semiconductor substrate;

the internal resistance portion is made from an n-type semiconductor; and

a voltage is applied so that those parts of the semiconductor substrate that are outside the internal resistance portion all at least one of the same electropotential or lower than that of the external conducting portion, and so that the potential difference formed between the internal resistance portion of the semiconductor substrate and those parts of the semiconductor substrate outside the internal resistance portion have less than a breakdown voltage.

5 . A pressure sensor as set forth in claim 1 , wherein: the number of contacts that are provided in the insulating layer is preferably equal to the number of external conducting portions or less than the number of external conducting portions.

6 . A pressure sensor manufacturing method, comprising the steps of:

forming an internal resistance portion in a semiconductor substrate;

forming an insulating layer on top of a semiconductor substrate;

forming an external conducting portion on top of an insulating layer; and

forming a contact for connecting electrically between the external conducting portion and the internal resistance portion in the insulating layer;

wherein:

in the external conducting portion forming process, an external conducting portion is formed in a range corresponding to a range wherein is formed an internal resistance portion on the semiconductor substrate.

7 . A pressure sensor manufacturing method as set forth in claim 6 , wherein: in the contact forming process, the number of contacts that are formed in the insulating layer is preferably equal to the number of external conducting portions or less than the number of external conducting portions.