LIGHT-EMITTING DEVICE
This disclosure discloses a light-emitting device, comprising a substrate having a first major surface and a second major surface; a plurality of light-emitting stacks on the first major surface; and at least one electronic device on the second major surface, wherein the light-emitting stacks are electrically connected to each other in series via a first electrical connecting structure; the electronic device are electrically connected to the light-emitting stacks via a second electrical connecting structure.
1 . A light-emitting device, comprising:
a substrate, comprising a first major surface and a second major surface;
a plurality of light-emitting stacks located on the first major surface of the substrate,
wherein the light-emitting stacks electrically connecting to each other via a first electrical connecting structure;
at least one electronic device located on the second major surface of the substrate; and
a second electrical connecting structure extending from the first major surface to the second major surface of the substrate and electrically connecting the light-emitting stacks and the electronic device.
2 . The light-emitting device of claim 1 , wherein the electronic device comprising a resistance, an inductance, capacitance, or a rectifying device.
3 . The light-emitting device of claim 2 , wherein the rectifying device comprising a plurality of semiconductor stacks.
4 . The light-emitting device of claim 1 , wherein the first electrical connecting structure comprising a metal wire or a metal plug passing through the substrate.
5 . The light-emitting device of claim 3 , wherein the semiconductor stacks form a light-emitting diode, a Zener diode, or a Schottky diode.
6 . The light-emitting device of claim 1 , further comprising a wavelength converting layer covering on the light-emitting stacks, wherein the material of the wavelength converting layer comprising a fluorescent material or a phosphor material.
7 . The light-emitting device of claim 2 , wherein the material of the resistance comprising tantalum nitride (TaN), silicon-chromium alloy (SiCr), or nickel-chromium alloy (NiCr).
8 . The light-emitting device of claim 1 , further comprising a heat dissipation layer on the second major surface of the substrate, wherein the heat dissipation layer comprising a thermal conductivity larger than 50 W/mK.
9 . The light-emitting device of claim 8 , wherein the thickness of the heat dissipation layer is larger than 3 μm or the area of the heat dissipation layer is not smaller than 50% of that of the substrate.
10 . The light-emitting device of claim 8 , wherein the material of the heat dissipation layer comprising copper, silver, gold, nickel, diamond, diamond-like carbon (DLC), aluminum nitride (AIN), graphite, carbon nanotube (CNT), or the composite thereof
11 . The light-emitting device of claim 1 , further comprising an adhesive layer located between the light-emitting stacks and the substrate and/or between the electronic device and the substrate, wherein the material of the adhesive layer comprising a metal material or an organic adhesive material.
12 . The light-emitting device of claim 1 , wherein the substrate is a single layer structure.
13 . The light-emitting device of claim 1 , which is adapted to the power supply with 100V, 110V, 220V, 240V, 12V, 24V, or 48V.
14 . A light-emitting device, comprising:
a substrate, comprising a first major surface and a second major surface;
a plurality of light-emitting stacks, located on the first major surface of the substrate; and
one bridge rectifying device and one passive device, located on the second major surface of the substrate, wherein the light-emitting stacks, the bridge rectifying device, and the passive device are electrically connected to each other.
15 . The light-emitting device of claim 14 , wherein the passive device comprising a thin-film resistance, a thin-film inductance, or a thin-film capacitance.
16 . The light-emitting device of claim 14 , further comprising an adhesive layer located between the light-emitting stacks and the substrate and/or between the passive device, the bridge rectifying device and the substrate, wherein the material of the adhesive layer comprising a metal material or an organic adhesive material.
17 . The light-emitting device of claim 14 , wherein the substrate is a single layer structure.
18 . The light-emitting device of claim 14 , which is adapted to the power supply with 100V, 110V, 220V, 240V, 12V, 24V, or 48V.