Active matrix substrate, electro-optical device, and electronic apparatus

1. An active matrix substrate comprising:

a substrate;

a display section having a pixel circuit formed on the substrate; and

a protection circuit connected to an interconnection of the display section,

wherein the protection circuit has a diode-connected transistor, an insulating layer provided so as to cover the transistor, and a light-shielding layer provided in a region above the insulating layer so as to face at least a channel region in the transistor and electrically connected to at least any one of a gate electrode and a source electrode of the transistor, and

wherein the light-shielding layer has an extension portion that extends outward from the transistor, and the extension portion forms a capacitive device along with a conductive member connected to at least any one of the gate electrode and the source electrode of the transistor and with the insulating layer.

2. The active matrix substrate according to claim 1 , wherein the light-shielding layer is composed of a light reflective metallic film, and the metallic film is connected to any one of the gate electrode and the source electrode through a transparent conductive layer laminated on the metallic film.

3. The active matrix substrate according to claim 1 , wherein the transistor has an inversely staggered configuration, and the insulating layer includes an organic insulating film at least above the channel region.

4. The active matrix substrate according to claim 3 , wherein the insulating layer above the channel region has a laminate structure including inorganic and organic insulating films, whereas the insulating layer in the region provided with the extension portion is composed of an only inorganic insulating film.

5. An active matrix substrate comprising:

a substrate;

a display section having a pixel circuit formed on the substrate; and

a protection circuit connected to an interconnection of the display section,

wherein the protection circuit has a diode-connected transistor, an insulating layer provided so as to cover the transistor, and a light-shielding layer provided in a region above the insulating layer so as to face at least a channel region in the transistor and electrically connected to at least any one of a gate electrode and a source electrode of the transistor, and

wherein the protection circuit is provided with a capacitive device having a first electrode connected to the gate electrode of the transistor, a second electrode connected to the source electrode of the transistor, and an insulating film formed by extending a gate insulating film of the transistor.

6. An electro-optical device comprising the active matrix substrate according to claim 1 .

7. An electronic apparatus comprising the electro-optical device according to claim 6 .