Organic light emitting display and method of manufacturing the same

1. An organic light emitting display comprising:

a substrate;

a gate electrode formed on the substrate;

a first insulating layer on the gate electrode;

an active layer comprising an oxide semiconductor material on the first insulating layer and the gate electrode;

a second insulating layer on the active layer;

source and drain electrodes on the second insulating layer coupled to the active layer;

a third insulating layer comprising an organic material on the source and drain electrodes and on the second insulator;

an anode electrode on the third insulating layer electrically coupled to the source or drain electrode;

a pixel defining layer on the anode electrode and the third insulator patterned so that the anode electrode in an emission region is exposed;

an organic light emitting layer formed on the exposed anode electrode; and

a cathode electrode formed on the organic light emitting layer,

wherein the anode electrode does not overlap the active layer.

2. The organic light emitting display as claimed in claim 1 , wherein the oxide semiconductor material comprises ZnO.

3. The organic light emitting display as claimed in claim 2 , wherein the oxide semiconductor material is doped with at least one of Ga, In, and Sn.

4. The organic light emitting display as claimed in claim 1 , wherein the organic material comprises acrylic or polyimide.

5. A method of manufacturing an organic light emitting display, the method comprising:

forming a gate electrode on a substrate;

forming a first insulating layer over the gate electrode;

forming an active layer comprising an oxide semiconductor material on the first insulating layer and the gate electrode;

forming a second insulating layer over the active layer;

forming source and drain electrodes coupled to the active layer over the second insulating layer;

forming a third insulating layer comprising an organic material over the source and drain electrodes;

patterning the third insulating layer to expose the source or drain electrode;

bathing the third insulating layer and the exposed source or drain electrode;

forming a first electrode over the third insulating layer, the first electrode being coupled to the exposed source or drain electrode, wherein the first electrode does not to overlap the active layer;

forming a pixel defining layer over third insulating layer and the first electrode, wherein the pixel defining layer exposes the first electrode in an emission region;

forming an organic light emitting layer over the exposed first electrode; and

forming a second electrode on the organic light emitting layer.

6. The method as claimed in claim 5 , wherein the oxide semiconductor material comprises ZnO.

7. The method as claimed in claim 6 , wherein the oxide semiconductor material is doped with at least one of Ga, In, Hf, and Sn.

8. The method as claimed in claim 5 , wherein the organic material comprises acrylic or polyimide.

9. The method as claimed in claim 5 , wherein H 2 O is used in the bathing.

10. The method as claimed in claim 9 , wherein H diffuses into the third insulating layer during the bathing.

11. The method as claimed in claim 10 , wherein H diffuses out of the third insulating layer over the active layer after the bathing.

12. The method as claimed in claim 11 , wherein H is prevented by the first electrode from diffusing out of the third insulating layer in an area not over the active area.

13. The method as claimed in claim 5 , further comprising forming a diffusion path for H from the active area through the second and third insulating layers, the diffusion path being substantially perpendicular to a plane defined by the substrate.

14. The method as claimed in claim 5 , further comprising planarizing the third insulating layer.

15. The method as claimed in claim 5 , further comprising performing a heat treatment after forming the pixel defining layer.