Solid-state imaging device, drive method therefor, and electronic device
View Patent ↗A solid-state imaging device includes: a normal pixel disposed in a pixel section capable of performing a global shutter, and including at least a photoelectric conversion part and a memory part adjacent to the photoelectric conversion part; and a leak-light correcting pixel disposed in the pixel section to correct degradation of an image quality originated from leak light leaked into the memory part.
1. A method for driving a solid-state imaging device including first and second pixels, each of the first and the second pixels including at least a photoelectric conversion part and a memory part adjacent to the photoelectric conversion part, the drive method comprising the steps of:
maintaining a transfer transistor of the second pixel in an OFF state and maintaining a potential barrier between the photoelectric conversion part of the second pixel and the memory part of the second pixel;
outputting a combined signal of a signal from the first pixel and a leak signal from the second signal, the leak signal being generated from leak light leaked into the memory part of the second pixel from the first pixel;
outputting only the leak signal; and
performing a subtraction process on the combined signal and the leak signal to compensate for the leak light from the first pixel.
2. The drive method according to claim 1 , wherein in the second pixel, the charge generated in the photoelectric conversion part of the second pixel is discharged to a reset part adjacent to the photoelectric conversion part, and a leak signal charge is stored only in the memory part of the second pixel.
3. An electronic device comprising:
an optical system;
a solid-state imaging device; and
a signal processing circuit that processes an output signal of the solid-state imaging device,
the solid-state imaging device having
(a) a first pixel disposed in a pixel section capable of performing a global shutter, and including at least a photoelectric conversion part and a memory part adjacent to the photoelectric conversion part,
(b) a second pixel disposed in the pixel section to correct degradation of an image quality due to leak light leaked into the memory part, the second pixel comprising a transistor with a gate configured to keep the transistor in an OFF state and maintain a potential barrier between a photoelectric conversion part of the second pixel and a memory part of the second pixel, and
the solid-state imaging device configured to perform a subtraction process on a signal acquired from the second pixel and a signal acquired from the first pixel to correct the signal acquired from the first pixel.
4. A solid-state imaging device comprising a pixel section having first and second pixels, wherein each of the first and the second pixels includes at least a photoelectric conversion part and a memory part adjacent to the photoelectric conversion part, the second pixel comprising a transistor with a gate configured to keep the transistor in an OFF state and maintain a potential barrier between the photoelectric conversion part of the second pixel and the memory part of the second pixel so that a charge stored in the photoelectric conversion part of the second pixel is not being read.
5. The solid-state imaging device according to claim 4 , wherein a signal acquired from the second pixel and a signal acquired from the first pixel are subjected to a subtraction process to enable correction of the signal acquired from the first pixel.
6. The solid-state imaging device according to claim 5 , wherein:
the first pixel has (a) a floating diffusion part and (b) a reset part used to reset an electric charge in the photoelectric conversion part of the first pixel, and
the second pixel generates a leak signal from leak light leaked into the memory part of the second pixel from the first pixel.
7. The solid-state imaging device according to claim 6 , wherein the second pixel has a reset part that is used to reset an electric charge in the photoelectric conversion part of the second pixel.
8. The solid-state imaging device according to claim 6 , wherein the second pixel has the photoelectric conversion part that does not have a pn junction.
9. The solid-state imaging device according to claim 7 , wherein each reset part has a respective reset drain region connected to a respective charge storage region adjacent to the respective memory part.
10. The solid-state imaging device according to claim 7 , wherein the reset part of the second pixel has a transistor with a gate configured to normally keep the transistor in an OFF state at a time of light exposure.
11. The drive method according to claim 1 further comprising providing the photoelectric conversion part of the second pixel that lacks a pn junction.
12. The drive method according to claim 2 further comprising providing in the reset part a reset drain region connected to a charge storage region adjacent to the memory part.
13. The drive method according to claim 2 further comprising providing in the reset part a transistor having a gate configured to normally keep the transistor in an OFF state at a time of light exposure.
14. The electronic device according to claim 3 , wherein the second pixel has a reset part that is used to reset an electric charge in the photoelectric conversion part of the second pixel.
15. The electronic device according to claim 3 , wherein the second pixel has the photoelectric conversion part that lacks a pn junction.
16. The electronic device according to claim 14 , wherein the reset part has a reset drain region connected to a charge storage region adjacent to the memory part.