Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
View Patent ↗Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.
1. A method of forming an alignment mark on a semiconductor film, comprising:
forming an amorphous or polycrystalline semiconductor film on a support substrate;
forming a protective film having a heat accumulation effect on the semiconductor film; and
irradiating an alignment mark forming element having an alignment mark profile corresponding to an alignment mark to be formed on the semiconductor film with laser light so that
(i) a laser light beam having a phase-modulated light intensity distribution is emitted from the alignment mark forming element;
(ii) an image is formed at a predetermined region on the semiconductor film by the laser light beam; and thus
(iii) the region of the semiconductor film is heated and molten to form the alignment mark crystallized by the heat accumulation effect of the protective film.
2. The method of claim 1 , wherein the shape of the image formed on the semiconductor film with the phase-modulated light substantially corresponds to the shape of the intensity distribution of the phase-modulated laser light.
3. The method of claim 1 , wherein the alignment mark crystallized on the semiconductor film forms a thermal-metamorphic region having optical characteristics different from the semiconductor film such that the alignment mark is optically discriminable from the semiconductor film.
4. The method according to claim 1 , further comprising:
attaching the support substrate to another support substrate via a seal member, using the alignment mask on the semiconductor film to assemble a liquid crystal display.
5. The method according to claim 1 , further comprising:
dicing the semiconductor substrate into a plurality of smallest substrates, using the alignment mask on the semiconductor film.
6. The method according to claim 1 , wherein the laser light is a homogenized beam with a two-dimensional uniform light intensity.
7. The method according to claim 1 , wherein the alignment mark forming element includes a plate and an opening formed in the plate to pass the laser light, the opening defining the alignment mark profile.
8. The method according to claim 7 , wherein the opening has a cross shape.
9. The method according to claim 1 , wherein the alignment mark forming element includes a phase shifter for locally modulating an intensity of the laser light.
10. The method according to claim 1 , wherein the alignment mark has optical characteristics that are different from those of a non-heated region of the semiconductor film.
11. The method according to claim 1 , wherein the laser light beam is emitted from a laser source which emits a second laser light for crystallizing a portion or portions of the semiconductor film other than the region by which the alignment mark has been formed, using the alignment mark.