Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing

1. A light emitting diode, comprising:

a substrate material having a substrate surface;

a plurality of hemispherical grained silicon (HSG) structures in direct contact with the substrate surface of the substrate material, the HSG structures having a base proximate the substrate surface of the substrate material, an apex spaced apart from the base, and a side surface between the base and the apex;

a semiconductor material on the substrate material and substantially encapsulating the plurality of HSG structures; and

an active region proximate the semiconductor surface of the semiconductor material, the active region including gallium nitride (GaN)/indium gallium nitride (InGaN) multiple quantum wells.

2. The light emitting diode of claim 1 wherein:

the semiconductor material is a first semiconductor material;

the substrate material includes at least a portion of a silicon wafer having a Si(1,1,1) crystal orientation;

the substrate surface is generally planar;

the base and the apex of the individual HSG structures have a Si(1,1,1) crystal orientation;

the side surface of the individual HSG structures does not have a preferential crystal orientation for epitaxial growth;

the first semiconductor material includes at least one of aluminum nitride (AlN), aluminum gallium nitride (AlGaN), and zinc nitride (ZnN);

the semiconductor surface has a crystal orientation that generally corresponds to that of the substrate surface, the semiconductor surface being generally parallel to the substrate surface;

the adjacent bases of the HSG structures are spaced apart from one another by a gap;

a portion of the substrate surface is exposed through the gap and in direct contact with the first semiconductor material; and

the light emitting diode further includes:

a second semiconductor material in direct contact with the semiconductor surface of the first semiconductor material, the second semiconductor material including an N-type GaN material; and

a third semiconductor material spaced apart from the second semiconductor material by the active region, the third semiconductor material including a P-type GaN material.

3. The light emitting diode of claim 1 wherein the HSG structures are generally aligned according to crystal orientation of the substrate surface.

4. The light emitting diode of claim 1 wherein the base and the apex of the individual HSG structures have a Si(1,1,1) crystal orientation.

5. The light emitting diode of claim 1 wherein:

the base and the apex of the individual HSG structures have a crystal orientation generally corresponding to that of the substrate surface; and

the side surface of the individual HSG structures does not have a preferential crystal orientation for epitaxial growth.

6. The light emitting diode of claim 1 wherein:

the base and the apex of the individual HSG structures have a Si(1,1,1) crystal orientation;

the side surface of the individual HSG structures does not have a preferential crystal orientation for epitaxial growth; and

the semiconductor surface of the semiconductor material has a crystal orientation that generally corresponds to the crystal orientation of the substrate surface.

7. The light emitting diode of claim 1 wherein:

the base and the apex of the individual HSG structures have a Si(1,1,1) crystal orientation;

the side surface of the individual HSG structures does not have a preferential crystal orientation for epitaxial growth; and

the semiconductor surface of the semiconductor material is at a crystal plane with a Miller index of (1,0,0,0).

8. The light emitting diode of claim 1 wherein:

the base and the apex of the individual HSG structures have a Si(1,1,1) crystal orientation;

the side surface of the individual HSG structures does not have a preferential crystal orientation for epitaxial growth;

the semiconductor material includes at least one of aluminum nitride (AlN), aluminum gallium nitride (AlGaN), and zinc nitride (ZnN); and

the semiconductor surface of the first semiconductor material is at a crystal plane with a Miller index of (1,0,0,0).

9. The light emitting diode of claim 1 wherein the plurality of HSG structures are spaced apart from one another.

10. A solid state lighting device, comprising:

a substrate material having a substrate surface;

a plurality of hemispherical grained silicon (HSG) structures on the substrate surface of the substrate material;

a semiconductor material on the substrate material, at least a portion of the semiconductor material being between the plurality of HSG structures; and

an active region proximate the semiconductor surface of the semiconductor material, the active region being configured to emit a light in response to an applied electrical voltage.

11. The solid state lighting device of claim 10 wherein the adjacent HSG structures are spaced apart from one another by a gap, and wherein the portion of the semiconductor material generally completely fills the gaps.

12. The solid state lighting device of claim 10 wherein:

the adjacent HSG structures are spaced apart from one another by a gap;

a portion of the substrate surface is exposed through the individual gaps; and

the portion of the semiconductor material generally completely fills the gaps and is in direct contact with the exposed portion of the substrate surface through the individual gaps.

13. The solid state lighting device of claim 10 wherein:

the HSG structures individually include a base proximate the substrate surface, an apex spaced apart from the base, and a side surface between the base and the apex;

adjacent side surfaces are spaced apart from one another by a gap;

the adjacent bases of the HSG structures are in direct contact with one another; and

a portion of the semiconductor material generally completely fills the gaps and is in direct contact with the side surfaces of the HSG structures.

14. The solid state lighting device of claim 10 wherein:

the HSG structures individually include a base proximate the substrate surface, an apex spaced apart from the base, and a side surface between the base and the apex;

adjacent side surfaces are spaced apart from one another by a gap;

a portion of the substrate surface is exposed by the individual gaps; and

a portion of the semiconductor material generally completely fills the gaps and is in direct contact with both the side surfaces of the HSG structures and the portion of the substrate surface that is exposed by the gaps.

15. The solid state lighting device of claim 10 wherein:

the HSG structures individually include a base proximate the substrate surface, an apex spaced apart from the base, and a side surface between the base and the apex;

at least one of the apex and base of the individual HSG structures is aligned in crystal orientation with that of the substrate surface;

adjacent side surfaces are spaced apart from one another by a gap;

a portion of the substrate surface is exposed by the individual gaps; and

a portion of the semiconductor material generally completely fills the gaps and is in direct contact with both the side surfaces of the HSG structures and the portion of the substrate surface that is exposed by the gaps.