TARGET, METHOD FOR PRODUCING THE SAME, MEMORY, AND METHOD FOR PRODUCING THE SAME

1 . A target comprising:

at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids;

at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and

at least one chalcogen element selected from the group consisting of S, Se, and Te.

2 . A method for producing a target containing a chalcogen element, comprising the steps of:

forming an alloy ingot using at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids and an additional element outside of the group;

pulverizing the alloy ingot; and

forming a target using the pulverized alloy ingot and at least one chalcogen element selected from the group consisting of S, Se, and Te.

3 . A method for producing a target according to claim 2 , wherein in the step of forming an alloy ingot, a material having a particle diameter of 100 μm or more is used as the at least one refractory metal element that serves as a raw material.

4 . A method for producing a target according to claim 2 , wherein the additional element outside of the group is at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga.

5 . A method for producing a target according to claim 2 , further comprising the steps of:

alloying the at least one chalcogen element and at least one additional element that is not a chalcogen element to form a second alloy ingot including the at least one chalcogen element; and

pulverizing the second alloy ingot, and

wherein the step of forming a target is performed using the pulverized alloy ingot and the pulverized second alloy ingot.

6 . A method for producing a target according to claim 5 , wherein the second alloy ingot has a melting point higher than the melting point of the at least one chalcogen element.

7 . A method for producing a target according to claim 5 , wherein the second alloy ingot is formed using as the at least one additional element that is not a chalcogen element at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga.

8 . A memory comprising a plurality of memory devices,

the memory devices including an ionization layer that is formed using a target containing at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids, at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga, and at least one chalcogen element selected from S, Se, and Te, and contains an element to be ionized.

9 . A method for producing a memory including a plurality of memory devices, comprising the steps of:

forming an alloy ingot using at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids and an additional element outside of the group;

pulverizing the alloy ingot;

forming a target using the pulverized alloy ingot and at least one chalcogen element selected from the group consisting of S, Se, and Te; and

forming an ionization layer of the memory devices by sputtering using the target, the ionization layer containing an element to be ionized.