Flat panel display device having reduced FRIT delamination and method of fabricating the same
View Patent ↗A flat panel display device and a method of fabricating the same, the flat panel display device including: a first substrate including a display portion to display an image and a peripheral portion disposed outside the display portion; a second substrate facing the first substrate; a frit disposed on the peripheral portion, to attach the first substrate to the second substrate; and a signal interconnection having portions overlapping the frit, to transmit a signal to the display portion. Edges of the signal interconnection that are overlapped by the frit are patterned, to prevent delamination of the frit.
1. A flat panel display device, comprising:
a first substrate including a display portion for displaying an image and a peripheral portion disposed outside the display portion;
a second substrate facing the first substrate;
a frit attaching the peripheral portion of the first substrate to the second substrate; and
a signal interconnection disposed between the frit and one of the first and second substrates for transmitting a signal to the display portion from an external source;
wherein edges of the signal interconnection that are covered by the frit have non-linear patterns formed therein.
2. The flat panel display device according to claim 1 , wherein the patterns of opposing ones of the covered edges are different types of patterns.
3. The flat panel display device according to claim 1 , wherein the patterns of opposing ones of the covered edges of the signal interconnection are symmetrical patterns.
4. The flat panel display device according to claim 1 , wherein the patterns are serpentine.
5. The flat panel display device according to claim 1 , wherein the patterns comprise projections and recesses.
6. The flat panel display device according to claim 5 , wherein the projections are generally T-shaped, and the recesses are generally one of rectangular and ovoid.
7. The flat panel display device according to claim 5 , wherein the recesses and projections are trapezoidal.
8. The flat panel display device according to claim 1 , wherein the signal interconnection is disposed directly on at least one of the first and the second substrates.
9. The flat panel display device according to claim 1 , wherein the display portion includes an organic light emitting diode comprising a first electrode, a second electrode, and at least one emission layer disposed between the first and second substrates.
10. The flat panel display device according to claim 9 , wherein the signal interconnection is formed of a same material as one of the first electrode and the second electrode.
11. The flat panel display device according to claim 1 , wherein the display portion includes a thin film transistor comprising a semiconductor layer, a gate electrode, a source electrode and a drain electrode.
12. The flat panel display device according to claim 11 , wherein the signal interconnection is formed of a same material as one of the gate electrode and the source and drain electrodes.
13. The flat panel display device according to claim 1 , further comprising an inorganic layer disposed between the frit and the signal interconnection.
14. The flat panel display device according to claim 1 , wherein the frit is formed of at least one selected from a group consisting of MgO, CaO, BaO, Li 2 , Na 2 O, K 2 O, B 2 O 3 , V 2 O 5 , ZnO, TeO 2 , Al 2 O 3 , SiO 2 , PbO, SnO, P 2 O 5 , Ru 2 O, Rh 2 O, Fe 2 O 3 , CuO, TiO 2 , WO 3 , Bi 2 O 3 , Sb 2 O 3 , lead-borate glass, tin-phosphate glass, vanadate glass, and borosilicate glass.
15. A method of fabricating a flat panel display device, comprising the steps of:
preparing a first substrate including a display portion and a peripheral portion;
forming a signal interconnection on the peripheral portion for transmitting an external signal to the display portion;
forming non-linear patterns in edges of the signal interconnection; and
attaching the first substrate to a second substrate using a frit disposed between the first and second substrates so that portions of the frit cover the patterned edges of the signal interconnection.
16. The method according to claim 15 , wherein:
the step of forming the first substrate includes forming a thin film transistor in the display portion, said thin film transistor comprising a semiconductor layer, a gate electrode, a source electrode and a drain electrode; and
the step of forming the signal interconnection is performed simultaneously with a forming of one of the gate electrode and the source and drain electrodes.
17. The method according to claim 15 , wherein:
the step of forming the display portion includes forming an organic light emitting diode in the display portion, said organic light emitting diode comprising a first electrode, a second electrode and at least one emission layer; and
the step of forming the signal interconnection is performed simultaneously with a forming of one of the first electrode and the second electrode.
18. The method according to claim 16 , wherein the signal interconnection is disposed directly on at least one of the first and second substrates.
19. The method according to claim 15 , wherein the step of forming the patterns in the edges of the signal interconnection comprises forming at least two different types of patterns.
20. The method according to claim 15 , wherein the step of forming the patterns in the edges of the signal interconnection comprises forming symmetrical patterns in opposing ones of the patterned edges.