Light emitting devices including wavelength converting material
Light-emitting devices and associated methods are provided. The light emitting devices can have a wavelength converting material-coated emission surface.
1. A light emitting device comprising:
a multi-layer stack of material including an n-doped region, a p-doped region and a light generating region disposed between the n-doped and p-doped regions, wherein at least a portion of the light generated from the light generating region emerges from the light emitting device via a top emission surface of the multi-layer stack of materials; and
a wavelength converting material layer disposed according to a pattern on the top emission surface of the multi-layer stack of material, wherein sidewalls of the multi-layer stack of material are substantially devoid of the wavelength converting material.
2. The light emitting device of claim 1 , wherein the wavelength converting material is phosphor.
3. The light emitting device of claim 1 , wherein greater than 75% of the emitted light emerges from the light emitting device via the top emission surface.
4. The light emitting device of claim 1 , wherein the pattern comprises a plurality of discrete features.
5. The light emitting device of claim 1 , wherein the pattern comprises a plurality of stripes.
6. The light emitting device of claim 1 , wherein greater than 50% of light emitted at a first wavelength is converted to a desired second wavelength by the wavelength converting material.
7. The light emitting device of claim 1 , wherein greater than 75% of light emitted at a first wavelength is converted to a desired second wavelength by the wavelength converting material.
8. The light emitting device of claim 1 , wherein greater than 90% of light emitted at a first wavelength is converted to a desired second wavelength by the wavelength converting material.
9. The light emitting device of claim 1 , wherein the pattern is pre-determined.
10. A light emitting device comprising:
a multi-layer stack of material including an n-doped region, a p-doped region and a light generating region disposed between the n-doped and p-doped regions, wherein at least a portion of the light generated from the light generating region emerges from the light emitting device via a top emission surface of the multi-layer stack of materials, wherein a plurality of recesses are formed in the top emission surface; and
a wavelength converting material layer disposed in the recesses in the top emission surface, wherein sidewalls of the multi-layer stack of material are substantially devoid of the wavelength converting material.
11. The light emitting device of claim 10 , wherein the recesses are formed according to a pattern.
12. The light emitting device of claim 10 , wherein the recesses are holes.
13. The light emitting device of claim 10 , wherein the holes have dimensions of less than 1 micron.
14. The light emitting device of claim 10 , wherein the wavelength converting material layer is disposed only in the recesses in the top emission surface.