IP Library Granted Patent US 8,262,745
Granted Patent B2
US 8,262,745 · App. 12/840,756 · Granted Sep 11, 2012

Capacitor with sacrificial lead wire configuration and improved manufacturing method thereof

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Quick Facts
Patent No.
US 8,262,745
App. No.
12/840,756
Granted
Sep 11, 2012
Kind
B2
Abstract

The capacitor has a monolithic anode and at least one anode lead wire extending from the anode. At least one sacrificial lead wire extends from the anode. A dielectric layer is on said anode and a cathode layer is on the dielectric layer. The anode lead wire is in electrical contact with the anode and a cathode lead is in electrical contact with the cathode.

Claims (19)

1. A method for forming a capacitor comprising:

pressing a powder into a monolith comprising at least one anode lead wire and a sacrificial lead wire extending there from;

engaging said sacrificial lead with a transport device;

transporting said anode to a dielectric formation station wherein dielectric is formed on said pressed anode forming an anodized anode;

transporting said anodized anode to a cathode application station wherein a cathode is formed on said dielectric; and

disengaging said sacrificial lead wire from said transport device.

2. The method for forming a capacitor of claim 1 further comprising at least one of attaching said anode lead wire to an anode termination and attaching said cathode to a cathode termination.

3. The method for forming a capacitor of claim 1 wherein said dielectric is formed by electrochemical oxidation of said anode.

4. The method for forming a capacitor of claim 1 wherein said sacrificial lead wire and at least one anode lead wire extends from a common face.

5. The method for forming a capacitor of claim 1 wherein said sacrificial lead wire and at least one anode lead wire extend from adjacent faces.

6. The method for forming a capacitor of claim 1 wherein said powder comprises at least one conductor selected from mixtures, alloys or conductive oxides of Al, W, Ta, Nb, Ti, Zr and Hf.

7. The method for forming a capacitor of claim 6 wherein said powder comprises at least one material selected from the group consisting of Al, Ta, Nb and NbO.

8. The method for forming a capacitor of claim 1 wherein said anode lead wire extends into said anode further than said sacrificial anode wire.

9. The method for forming a capacitor of claim 1 wherein said anode lead wire has a larger cross-sectional area than said sacrificial lead wire.

10. The method for forming a capacitor of claim 1 further comprising providing substrate comprising a via and inserting said anode lead wire into said via.

11. The method for forming a capacitor of claim 10 wherein said substrate is a conductor.

12. The method for forming a capacitor of claim 11 wherein said substrate is an electrical contact between an anode termination and said anode lead.

13. The method for forming a capacitor of claim 1 further comprising attaching said capacitor to a substrate.

14. The method for forming a capacitor of claim 13 further comprising attaching an electronic package to said substrate wherein said electronic package is in electrical connection with said capacitor.

Assignments (2)
SECURITY INTEREST Recorded Oct 5, 2010
From: KEMET ELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A. AS AGENT
Reel/Frame 025150/0023 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 21, 2010
From: REED, ERIK; JACOBS, DAVID; HAHN, RANDOLPH S.
To: KEMET ELECTRONICS CORPORATION
Reel/Frame 024720/0768 →