IP Library Granted Patent US 8,651,204
Granted Patent B2
US 8,651,204 · App. 12/843,286 · Granted Feb 18, 2014

Metal-free supported polycrystalline diamond and method to form

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Quick Facts
Patent No.
US 8,651,204
App. No.
12/843,286
Granted
Feb 18, 2014
Kind
B2
Abstract

An cutting element incorporates a non-magnetic and electrically conductive substrate on which a layer of polycrystalline diamond particles is sintered to the substrate. An method of forming a cutting element comprises sintering the substrate, a layer of diamond particles and a catalyst source at a pressure greater than 20 kbar and a temperature greater than 1200° C. to form a layer of polycrystalline diamond particles bonded to the substrate. Cutting elements incorporating non-magnetic and electrically conductive substrates can be sectioned using ablation techniques, such as laser cutting.

Claims (28)

1. A cutting element, comprising:

a substrate; and

a layer of superhard particles sintered to the substrate, the layer including a working surface at a first surface distal from the substrate,

wherein the substrate is non-magnetic and electrically conductive in such that there is substantially free of a recast metal from the substrate after a laser cut wherein the layer of superhard particles has an iron group binder metal, wherein the iron group binder metal infiltrates from the layer of superhard particles into the substrate.

2. The cutting element of claim 1 , wherein the superhard particles are selected from the group of polycrystalline diamond particles or cBN particles.

3. The cutting element of claim 1 , wherein the substrate has a composition including tungsten carbide and an iron group binder metal present in an amount of less than about 0.5 wt-%.

4. The cutting element of claim 3 , wherein the iron group binder metal is present in an amount of greater than zero wt-%.

5. The cutting element of claim 3 , wherein the composition of the substrate is free of binder metal.

6. The cutting element of claim 3 , wherein the composition further includes a metal carbide.

7. A method of forming a cutting element, the method comprising:

positioning a substrate on a first side of a layer of diamond particles;

positioning a catalyst source on a second side of the layer of diamond particles; and

sintering the substrate, the layer of diamond particles and a catalyst source at a pressure greater than 20 kbar and a temperature greater than 1200° C. to form a layer of polycrystalline diamond particles bonded to the substrate,

wherein the substrate is non-magnetic and electrically conductive in such that there is substantially free of a recast metal from the substrate after being sectioned via an ablation technique, wherein the layer of superhard particles has a binder metal, wherein the binder metal infiltrates from the layer of superhard particles into the substrate.

8. The method of claim 7 , wherein the substrate has a composition including tungsten carbide and an iron group binder metal present in an amount of less than about 0.5 wt-%.

9. The method of claim 8 , wherein the iron group binder metal is present in an amount of greater than zero wt-%.

10. The method of claim 8 , wherein the composition of the substrate is free of binder metal.

11. The method of claim 8 , wherein the composition further includes a metal carbide.

12. A method of sectioning a cutting element, the method comprising:

ablating the cutting element to form a reduced shape,

wherein the cutting element includes a substrate and a layer of superhard particles sintered to the substrate, and wherein the substrate is non-magnetic and electrically conductive.

13. The method of claim 12 , wherein the superhard particles are selected from the group of polycrystalline diamond particles and cBN particles.

14. The method of claim 12 , wherein ablating includes laser cutting.

15. The method of claim 14 , wherein there is an absence of recast material from the substrate in the region of the cut.

16. The method of claim 12 , wherein the substrate has a composition including tungsten carbide and an iron group binder metal present in an amount of less than about 0.5 wt-%.

17. The method of claim 16 , wherein the iron group binder metal is present in an amount of greater than zero wt-%.

18. The method of claim 16 , wherein the composition of the substrate is free of binder metal.

19. The method of claim 16 , wherein the composition further includes a metal carbide.

Assignments (6)
SECURITY INTEREST Recorded Aug 31, 2021
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 057388/0971 →
2L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057650/0602 →
1L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057651/0040 →
FIRST LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0415 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0472 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2010
From: WEBB, STEVEN
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 025121/0750 →