Method of preparing low resistance metal line, patterned metal line structure, and display device using the same
View Patent ↗Disclosed herein is a method of preparing a low resistance metal line, in which a wet plating technique is used instead of a vacuum film forming process in order to simplify the process and decrease the manufacturing cost. In addition, a self-assembled monolayer is formed that facilitates the increased adsorption density and strength of the metal catalyst resulting in the formation of a high-density metal catalyst layer, thereby obtaining a high-quality metal line. Also disclosed herein, are a patterned metal line structure, and a display device using the same.
1. A method of preparing a low resistance metal line comprising:
forming a mask pattern for a metal line on a substrate;
applying a self-assembled monolayer on the substrate;
forming a seed layer on the substrate comprising the self-assembled monolayer;
plating an assistant metal film on the seed layer;
removing the mask pattern and layers thereon by means of lift-off; and
plating a metal layer on the patterned assistant metal film.
2. The method of claim 1 , wherein the self-assembled monolayer comprises an organosilane compound.
3. The method of claim 2 , wherein the self-assembled monolayer comprises a material represented by Formula 1 below:
Si(OR) 3-n (R) n X [Formula 1]
wherein R is a C 1-12 alkyl group, an alkylene group, or a phenyl group;
X is AB, in which A is a C 1-12 alkyl group, an alkylene group, or a phenyl group, and B is an amino group, a cyano group, a mercapto group, a pyridine group, or a diphenylphosphine group; and
n is an integer from 0 to 3.
4. The method of claim 3 , wherein the self-assembled monolayer comprises a material selected from a material group represented by Formula 2 below:
5. The method of claim 1 , wherein forming the seed layer is conducted using immersing method, spin coating, vapor deposition, Langmuir Blodgett method, or combinations thereof.
6. The method of claim 1 , wherein the forming the seed layer is conducted through activation using a metal selected from gold, silver, copper, nickel, tin, iron, platinum, palladium, palladium alloy, palladium chloride, or a combination comprising at least one of the foregoing metals for activation.
7. The method of claim 1 , wherein plating the assistant metal film is conducted using a metal selected from nickel, tin, cobalt, or zinc, or a combination comprising at least one of the foregoing metals.
8. The method of claim 1 , wherein plating the metal layer is conducted using electroless plating or electroplating.
9. The method of claim 1 , wherein plating the metal layer is conducted using a metal selected from Ni, Cu, Ag, Au, or alloys thereof, or a combination comprising at least one of the foregoing metals.
10. The method of claim 1 , wherein plating the metal layer is conducted by immersing the substrate in an electroless copper plating solution comprising a copper salt, a complexing agent, a reducing agent, and a pH control agent.
11. The method of claim 1 further comprising: forming a passivation layer on the metal layer.
12. The method of claim 11 , wherein forming the passivation layer is conducted using a material selected from nickel, molybdenum, a nickel alloy, and a molybdenum alloy.
13. The method of claim 1 further comprising: annealing the low resistance metal line obtained after forming the metal layer.
14. The method of claim 13 , wherein the annealing is conducted at about 40 to about 400° C. for about 15 to about 120 minutes in a nitrogen or argon gas atmosphere, or in a vacuum.