Semiconductor light emitting device and method for manufacturing the same
Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.
1. A semiconductor light emitting device, comprising:
a substrate, in which concave-convex patterns are in at least one of a top-side and a backside of the substrate; and
a light emitting structure on the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer,
wherein the concave-convex patterns comprise first concave-convex patterns at a first area of the substrate and second concave-convex patterns at a second area of the substrate,
wherein a concave pattern of the first concave-convex patterns has a depth deeper than a depth of a concave pattern of the second concave-convex patterns.
2. The semiconductor light emitting device as claimed in claim 1 , wherein the concave-convex patterns are formed at the backside of the substrate.
3. The semiconductor light emitting device as claimed in claim 1 , wherein the substrate comprises one of sapphire (Al 2 O 3 ), GaN, SiC, ZnO, GaP, GaAs and Si.
4. The semiconductor light emitting device as claimed in claim 2 , wherein the depth of the concave pattern of the second concave-convex patterns is about 200 to 400 μm.
5. The semiconductor light emitting device as claimed in claim 2 , wherein a width of the concave pattern of the first concave-convex patterns and a width of the concave pattern of the second concave-convex patterns is 1 μm to 10 μm.
6. The semiconductor light emitting device as claimed in claim 2 , wherein the first concave-convex patterns are aligned in a center area in the backside of the substrate.
7. The semiconductor light emitting device as claimed in claim 1 , wherein the concave-convex patterns are aligned at an entire area of the substrate.
8. The semiconductor light emitting device as claimed in claim 7 , wherein an interval of the concave pattern of the first concave-convex patterns and an interval of a convex pattern of the second concave-convex patterns are the same.
9. The semiconductor light emitting device as claimed in claim 7 , wherein convex patterns of the concave-convex patterns are formed in a stripe shape.
10. The semiconductor light emitting device as claimed in claim 2 , wherein the convex patterns of the concave-convex patterns include at least one of a polygonal shape, or a horn-shape.
11. The semiconductor light emitting device as claimed in claim 1 , wherein the concave pattern of the first concave-convex patterns has a width wider than a width of the concave pattern of the second concave-convex patterns.
12. The semiconductor light emitting device as claimed in claim 1 , wherein the concave pattern of the first concave-convex patterns has a width 1.5 to 2.5 wider than a width of the concave pattern of the second concave-convex patterns.
13. The semiconductor light emitting device as claimed in claim 1 , wherein the concave pattern of the second concave-convex patterns has a depth of about 0.1 to 10 μm.
14. The semiconductor light emitting device as claimed in claim 1 , wherein the first conductive semiconductor layer comprises at least one of GaN, AlGaN, InGaN, InN, AlN or InAlGaN.
15. The semiconductor light emitting device as claimed in claim 2 , wherein the concave-convex patterns are aligned at an entire area of the substrate.
16. The semiconductor light emitting device as claimed in claim 15 , wherein an interval of the concave pattern of the first concave-convex patterns and an interval of a convex pattern of the second concave-convex patterns are the same.
17. The semiconductor light emitting device as claimed in claim 15 , wherein convex patterns of the concave-convex patterns are formed in a stripe shape.
18. The semiconductor light emitting device as claimed in claim 15 , wherein the depth of the concave pattern of the second concave-convex patterns is about 0.1 to 10 μm.
19. The semiconductor light emitting device as claimed in claim 1 , wherein the concave-convex patterns are formed at the top-side of the substrate.