Integrated microphone

1. A method of forming a microphone having a variable capacitance, the method comprising:

depositing high temperature deposition material on a die;

processing the high temperature material to form a variable capacitor, the high deposition material forming a diaphragm that is part of the variable capacitor, the variable capacitor producing at least part of the variable capacitance; and

forming circuitry on the die after depositing the deposition material, the circuitry being configured to detect the variable capacitance.

2. The method as defined by claim 1 further wherein processing comprises releasing the diaphragm after forming circuitry on the die.

3. The method as defined by claim 1 wherein the deposition material is polysilicon.

4. The method as defined by claim 1 wherein processing comprises processing the deposition material to form an unreleased variable capacitor.

5. The method as defined by claim 1 wherein the die is a part of a SOI wafer.

6. The method as defined by claim 1 wherein the microphone is a MEMS microphone.

7. The method as defined by claim 1 processing comprises:

adding sacrificial material to the die, the sacrificial material being between the deposition material and the die;

selectively removing at least a portion of the deposition material; and

selectively removing at least a portion of the sacrificial material to suspend the deposition material after forming the circuitry.

8. The method as defined by claim 1 wherein depositing comprises:

determining a temperature at which to deposit the deposition material as a function of the circuitry to be formed on the die.

9. The apparatus formed by the process of claim 1 .

10. The apparatus formed by the process of claim 7 .

11. A microphone apparatus comprising:

a SOI wafer;

means for converting an audio signal to an electrical signal, the converting means being formed at least in part by the SOI wafer and having a diaphragm and backplate that form a variable capacitor means; and

means for detecting the capacitance of the variable capacitor means, the detecting means being formed on the SOI wafer.

12. The microphone as defined by claim 11 wherein the diaphragm is formed from a high temperature deposition material.

13. The microphone as defined by claim 11 wherein the diaphragm is formed from a low temperature deposition material.

14. The microphone as defined by claim 11 wherein the backplate is formed by a portion of the SOI wafer.