Mount for a semiconductor light emitting device

1. A structure comprising:

a mount, the mount comprising:

a carrier;

at least two metal leads having top surfaces, the top surfaces being affixed to a bottom surface of the carrier so as to be supported by the carrier;

a cavity extending through a thickness of the carrier to expose a portion of the top surfaces of the at least two metal leads,

the metal leads comprising at least two metal pieces, each having a top surface and an opposing bottom surface, with metal directly between the top surface and bottom surface;

a semiconductor light emitting device disposed in the cavity, the semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region, electrodes on the light emitting device being bonded to the exposed top surfaces of the metal leads such that there is a direct current path to the electrodes between the top surface of the metal leads and the bottom surface of the metal leads; and

a mold material molded over the light emitting device while within the cavity, the mold material covering the light emitting device and filling at least a portion of the cavity.

2. The structure of claim 1 wherein the mold material encapsulates the light emitting device.

3. The structure of claim 1 wherein the mold material secures the light emitting device within the cavity.

4. The structure of claim 1 wherein the mold material contains a phosphor.

5. The structure of claim 1 wherein the mold material is a first mold material that does not contain a phosphor, the structure further comprising a second mold material molded over the first mold material, the second mold material containing a phosphor.

6. The structure of claim 1 wherein the mold material protects any wire bonds between the light emitting device and one or more of the metal leads.

7. The structure of claim 1 wherein the at least two metal leads are supported solely by the carrier and the light emitting device.

8. The structure of claim 1 wherein the carrier is flexible.

9. A structure comprising:

a mount, the mount comprising:

a carrier;

at least two metal leads disposed-on a bottom surface of the carrier;

a cavity extending through a thickness of the carrier to expose a portion of top surfaces of the at least two metal leads;

a semiconductor light emitting device disposed in the cavity, the semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region; and

a mold material molded over the light emitting device while within the cavity, the mold material covering the light emitting device and filling at least a portion of the cavity, wherein the mold material forms a lens over the light emitting device.

10. The structure of claim 9 wherein the mold material forms a lens between 1 mm and 5 mm in diameter.

11. A structure comprising:

a mount, the mount comprising:

a carrier;

at least two metal leads disposed-on a bottom surface of the carrier;

a cavity extending through a thickness of the carrier to expose a portion of top surfaces of the at least two metal leads;

a semiconductor light emitting device disposed in the cavity, the semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region;

a mold material molded over the light emitting device while within the cavity, the mold material covering the light emitting device and filling at least a portion of the cavity; and

a lens over the mold material.

12. A method of forming a light emitting structure comprising:

providing a carrier having metal leads formed on a bottom surface of the carrier, the metal leads having top surfaces, the top surfaces being affixed to the bottom surface of the carrier so as to be supported by the carrier,

the metal leads comprising at least two metal pieces, each having a top surface and an opposing bottom surface, with metal directly between the top surface and bottom surface;

the metal leads being exposed in a cavity that extends from a top surface of the carrier through a thickness of the carrier, a semiconductor light emitting device being positioned in the cavity and having electrodes electrically connected to the metal leads exposed in the cavity, electrodes on the light emitting device being bonded to the exposed top surfaces of the metal leads such that there is a direct current path to the electrodes between the top surface of the metal leads and the bottom surface of the metal leads; and

molding a mold material over the light emitting device so as to at least partially fill the cavity.

13. The method of claim 12 wherein the mold material encapsulates the light emitting device.

14. A method of forming a light emitting structure comprising:

providing a carrier having metal leads formed on a bottom surface of the carrier;

the metal leads being exposed in a cavity that extends from a top surface of the carrier through a thickness of the carrier, a semiconductor light emitting device being positioned in the cavity and having electrodes electrically connected to the metal leads exposed in the cavity; and

molding a mold material over the light emitting device so as to at least partially fill the cavity,

wherein the step of molding comprises:

bringing the carrier and a mold containing the mold material together;

creating a vacuum between the carrier and the mold; and

curing the mold material.

15. A method of forming a light emitting structure comprising:

providing a carrier having metal leads formed on a bottom surface of the carrier;

the metal leads being exposed in a cavity that extends from a top surface of the carrier through a thickness of the carrier, a semiconductor light emitting device being positioned in the cavity and having electrodes electrically connected to the metal leads exposed in the cavity; and

molding a mold material over the light emitting device so as to at least partially fill the cavity,

wherein the step of molding forms a lens over the light emitting device.