IP Library Granted Patent US 8,679,860
Granted Patent B1
US 8,679,860 · App. 12/855,080 · Granted Mar 25, 2014

Lateral electrodeposition of compositionally modulated metal layers

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Quick Facts
Patent No.
US 8,679,860
App. No.
12/855,080
Granted
Mar 25, 2014
Kind
B1
Abstract

A method for making a laterally modulated metallic structure that is compositionally modulated in the lateral direction with respect to a substrate.

Claims (15)

1. A method for forming a laterally modulated metallic structure comprising:

forming a pattern in a masking material situated on a first metal layer to form an exposed region of the first metal layer;

etching the exposed region of the first metal layer to expose a substantially nonconductive substrate;

etching the first metal layer between the masking material and the substantially nonconductive substrate for a distance to form a cavity comprising a first metal sidewall and an underside of the masking material; and

electrochemically depositing a second metal layer on the first metal sidewall, the second metal layer comprising one or more metals, wherein the second metal layer is deposited in a sideways direction from the first metal sidewall.

2. The method of claim 1 , wherein at least one of the one or more metals differs from a metal of the first metal layer.

3. The method of claim 1 , wherein the step of etching is a cathodic etching step.

4. The method of claim 1 , wherein the step of electrochemically depositing uses a time-varying potential.

5. The method of claim 4 , wherein the time-varying potential is a pulsed potential.

6. The method of claim 1 , wherein the step of electrochemically depositing uses a periodically varying potential.

7. The method of claim 1 , wherein the second metal layer comprises alternating layers of ferromagnetic metal and nonferromagnetic metal.

8. The method of claim 1 , further comprising removing the masking material after the step of electrochemically depositing.

9. The method of claim 1 , wherein the first metal layer is selected from the group consisting of Cu, a copper alloy, Ni, a Ni alloy, Ag, a Ag alloy, Au, a Au alloy, Co, and a Co alloy.

10. The method of claim 1 , wherein the one or more metals of the second metal layer are selected from the group consisting of Cu, a copper alloy, Ni, a Ni alloy, Ag, a Ag alloy, Au, a Au alloy, Co, and a Co alloy.

11. The method of claim 1 , further comprising removing a portion of the substantially nonconductive substrate.

Assignments (1)
CHANGE OF NAME Recorded Sep 26, 2018
From: SANDIA CORPORATION
To: NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
Reel/Frame 047638/0729 →