Thermal humidity sensor
View Patent ↗Provided is a high-precision, mechanically robust thermal humidity sensor. A detecting element 1 of the thermal humidity sensor of the present invention has a diaphragm (a bridge structure) 2 formed on a planar substrate which is formed from a material with high thermal conductivity such as silicon or ceramic. Formed on the diaphragm 2 are temperature detecting resistors 4, 5, 6 , and 7 and a heating resistor 3 arranged in a manner surrounding the temperature detecting resistors. Humidity is detected based on the outputs of the temperature detecting resistors 4, 5, 6 , and 7 . Accordingly, humidity measurement errors that can possibly occur due to the leakage of heat through the diaphragm 2 to the planar substrate can be reduced.
1. A thermal humidity sensor comprising:
a plurality of temperature sensors;
a heating element configured to generate heat in two heat generating positions that are opposite each other with the plurality of temperature sensors interposed therebetween;
humidity detecting means for detecting humidity based on outputs of the plurality of temperature sensors; and
temperature detecting means for detecting a temperature at an intermediate position between the two heat generating positions based on the outputs of the plurality of temperature sensors,
wherein the humidity detecting means detects humidity based on the temperature detected by the temperature detecting means.
2. The thermal humidity sensor according to claim 1 , wherein the heating element has a loop shape that surrounds the plurality of temperature sensors.
3. The thermal humidity sensor according to claim 1 , wherein the heating element has a pair of heating elements that run in parallel with each other.
4. The thermal humidity sensor according to claim 3 , wherein a length of the pair of heating elements in a direction in which the heating elements run in parallel with each other is longer than a distance between the pair of heating elements.
5. The thermal humidity sensor according to claim 1 , wherein
the temperature detecting means detects a temperature distribution of a region between the two heat generating positions based on the outputs of the plurality of temperature sensors, and
the humidity detecting means detects humidity based on the temperature distribution detected by the temperature detecting means.
6. The thermal humidity sensor according to claim 1 , wherein
the intermediate position includes a plurality of intermediate positions,
the temperature detecting means detects a temperature difference between at least two intermediate positions, and
the humidity detecting means detects humidity based on the temperature difference detected by the temperature detecting means.
7. The thermal humidity sensor according to claim 1 , comprising at least two temperature sensors, wherein one of the temperature sensors is arranged closer to the heat generating position than the other temperature sensor is.
8. The thermal humidity sensor according to claim 1 , further comprising temperature control means for controlling a temperature of the heating element constant.
9. The thermal humidity sensor according to claim 8 , wherein the temperature control means changes the temperature of the heating element in accordance with an ambient temperature.
10. The thermal humidity sensor according to claim 8 , wherein the temperature control means controls the temperature of the heating element so that a temperature difference between the temperature of the heating element and the ambient temperature is constant.
11. The thermal humidity sensor according to claim 1 , wherein the heating element and the temperature sensor are arranged on a heat insulating portion provided on a silicon substrate.
12. The thermal humidity sensor according to claim 11 , further comprising an ambient temperature sensor arranged on the silicon substrate, the ambient temperature sensor being configured to detect the ambient temperature.
13. The thermal humidity sensor according to claim 11 , further comprising a thermal flow meter arranged on the silicon substrate.