Method of manufacturing display device
View Patent ↗In a method of manufacturing a display device, a first insulating layer is formed on a semiconductor pattern. Ions of a first concentration are injected into source and drain domains of the semiconductor pattern and a lower electrode of the semiconductor pattern by using a mask pattern that selectively overlaps a channel domain of the semiconductor pattern and is positioned on the top of the first insulating layer. The mask pattern is removed. An ion injection process of injecting ions of a second concentration lower than the first concentration into the semiconductor pattern of the channel domain is directly performed in the first insulating layer. A gate electrode that overlaps the channel domain is formed on the top of the first insulating layer. An upper electrode that overlaps the lower electrode is formed on the top of the first insulating layer.
1. A method of manufacturing a display device, comprising:
forming a semiconductor pattern on a substrate;
forming a first insulating layer on the semiconductor pattern;
injecting ions of a first concentration into source and drain domains of the semiconductor pattern and a lower electrode of the semiconductor pattern by using a mask pattern that selectively overlaps a channel domain of the semiconductor pattern and is positioned on the top of the first insulating layer;
removing the mask pattern;
directly performing an ion injection process of injecting ions of a second concentration lower than the first concentration into the semiconductor pattern of the channel domain in the first insulating layer;
forming a gate electrode that overlaps the channel domain on the top of the first insulating layer; and
forming an upper electrode that overlaps the lower electrode on the top of the first insulating layer.
2. The method of manufacturing a display device of claim 1 , wherein the ion injection process is performed directly on the semiconductor pattern.
3. The method of manufacturing a display device of claim 1 , wherein the lower electrode is connected to one of the source and drain domains.
4. The method of manufacturing a display device of claim 1 , wherein forming the semiconductor pattern further includes patterning the semiconductor pattern so that the channel domain, source, and drain domains and the lower electrode are spaced from each other.
5. The method of manufacturing a display device of claim 1 , further comprising:
forming a lightly doped drain domain (LDD) by injecting ions of a third concentration lower than the first concentration and higher than the second concentration into the semiconductor pattern by using the gate electrode as an ion injection mask.
6. The method of manufacturing a display device of claim 1 , further comprising:
forming a second insulating layer on the first insulating layer including the gate electrode and the upper electrode;
forming a contact hole to expose the semiconductor pattern of the source and drain domains by patterning the second insulating layer and the first insulating layer; and
forming source and drain electrodes connected with the source and drain domains through the contact hole and a pixel electrode connected with the source or drain electrode.
7. The method of manufacturing a display device of claim 6 , further comprising:
forming a pixel defining film on the second insulating layer including the pixel electrode;
exposing the pixel electrode of a light emitting domain by patterning the pixel defining film;
forming an organic light emitting layer on the exposed pixel electrode; and
forming a cathode electrode on the organic light emitting layer.
8. The method of manufacturing a display device of claim 1 , wherein forming the semiconductor pattern further includes patterning the semiconductor pattern so that the channel domain, source, and drain domains and the lower electrode are integrally formed.
9. The method of manufacturing a display device of claim 7 , further comprising: forming a second substrate with a common electrode to oppose the pixel electrodes.
10. A method of manufacturing a display device comprising a semiconductor pattern formed on a substrate, a first insulating layer formed on the semiconductor pattern, a mask pattern that selectively overlaps a channel domain of the semiconductor pattern and is positioned on top of the first insulating layer, and a plurality of ion concentrations, the method comprising:
injecting ions of a first concentration into source and drain domains of the semiconductor pattern and a lower electrode of the semiconductor pattern by using the mask pattern such that the mask pattern selectively overlaps a channel domain of the semiconductor pattern and is positioned on the top of the first insulating layer;
removing the mask pattern;
directly performing an ion injection process of injecting ions of a second concentration lower than the first concentration into the semiconductor pattern of the channel domain in the first insulating layer;
forming a gate electrode that overlaps the channel domain on the top of the first insulating layer; and
forming an upper electrode that overlaps the lower electrode on the top of the first insulating layer.
11. The method of manufacturing a display device of claim 10 , further comprising:
forming a lightly doped drain domain (LDD) by injecting ions of a third concentration lower than the first concentration and higher than the second concentration into the semiconductor pattern by using the gate electrode as an ion injection mask.