Etchant for electrode and method of fabricating thin film transistor array panel using the same
View Patent ↗The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.
1. A metal wiring etchant composition, the etchant comprising:
hydrogen peroxide at about 6 wt % to about 12 wt %;
an oxidant at about 1 wt % to about 2 wt %;
a fluoride-based compound at about 0.2 wt% to about 0.7 wt %;
a nitrate-based compound at about 0.5 wt% to about 3 wt %;
wherein the nitrate-based compound comprises nitric acid, potassium nitrate, ammonium nitrate, sodium nitrate, or a combination comprising at least one of the foregoing
and a boron-based compound at about 0.05 wt % to about 1 wt %; wherein the boron-based compound comprises boric acid, borate, boron oxide, borazole, or a combination comprising at least one of the foregoing; and
wherein the metal wiring comprises at least one of a copper layer, a copper alloy layer, a titanium layer, a titanium alloy layer, a molybdenum layer, a molybdenum alloy layer, and a multilayer thereof, and wherein when the metal wiring comprises the multilayer, the metal layer comprises a first layer including copper and a second layer comprising at least one of titanium or molybdenum.
2. The etchant composition of claim 1 , wherein the oxidant comprises potassium hydrogen sulfate, sodium nitrate, ammonium sulfate, sodium sulfate, sodium hydrogen sulfate, or a combination comprising at least one of the foregoing.
3. The etchant composition of claim 1 , wherein the fluoride-based compound comprises acidic ammonium fluoride, fluorosilicic acid, potassium hydrogen fluoride, or a combination comprising at least one of the foregoing.
4. The etchant composition of claim 1 , wherein the etchant composition further comprises a chelating agent at about 0.1 wt % to about 5 wt %.
5. The etchant composition of claim 4 , wherein the chelating agent comprises an organic chelating agent including an amino group and a carboxyl group.
6. The etchant composition of claim 5 , wherein the chelating agent comprises ethylenediaminetetraacetic acid, iminodiacetic acid, nitrilotriacetic acid, diethylene trinitrilo pentaacetic acid, or a combination comprising at least one of the foregoing.
7. The etchant composition of claim 1 , wherein the etchant composition further comprises an additive at about 0.1 wt % to about 5 wt %.
8. The etchant composition of claim 7 , wherein the additive comprises 5-aminotetrazole, 1,2,3-benzotrazole, methylbenzotriazole, imidazole, peroxide stabilize agent, or a combination comprising at least one of the foregoing additives.