IP Library › Granted Patent US 8,338,954
Granted Patent B2
US 8,338,954 · App. 12/858,929 · Granted Dec 25, 2012

Semiconductor apparatus and fabrication method thereof

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Quick Facts
Patent No.
US 8,338,954
App. No.
12/858,929
Granted
Dec 25, 2012
Kind
B2
Abstract

A semiconductor apparatus includes an aluminum electrode film formed on a semiconductor chip; and a nickel plated layer formed on the aluminum electrode film, wherein a concentration of sodium and potassium present in the nickel plated layer and at an interface between the nickel plated layer and the aluminum electrode film is 3.20×10 14 atoms/cm 2 or less.

Claims (4)

1. A semiconductor apparatus comprising:

an aluminum electrode film formed on a semiconductor chip; and

a nickel plated layer formed on the aluminum electrode film, wherein

a concentration of sodium and potassium present in the nickel plated layer and at an interface between the nickel plated layer and the aluminum electrode film is 3.20×10 14 atoms/cm 2 or less.

Assignments (2)
MERGER AND CHANGE OF NAME Recorded Aug 26, 2011
From: FUJI ELECTRIC SYSTEMS CO., LTD. (FES); FUJI TECHNOSURVEY CO., LTD. (MERGER BY ABSORPTION)
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 026970/0872 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 20, 2010
From: FUJIWARA, HITOSHI; HORASAWA, TAKAYASU; KAZAMA, KENICHI
To: FUJI ELECTRIC SYSTEMS CO., LTD.; C. UYEMURA & CO., LTD.
Reel/Frame 024865/0093 →