METHODS, SYSTEMS AND DEVICES FOR INCREASING DATA RETENTION ON SOLID-STATE MASS STORAGE DEVICES
Methods, systems and devices for increasing the reliability of solid state drives containing one or more NAND flash memory arrays. The methods, systems and devices take into account usage patterns that can be employed to initiate proactive scrubbing on demand, wherein the demand is automatically generated by a risk index that can be based on one or more of various factors that typically contribute to loss of data retention in NAND flash memory devices.
1 . A method of increasing reliability of at least one NAND flash memory device of a mass storage device, the method comprising:
logging timestamps of data writes to addresses of the NAND flash memory device;
logging the number of read accesses of the data at the addresses;
calculating a risk index based on the age of the data at the address;
generating a risk warning if the risk index of the data at the address exceeds a predefined threshold;
communicating the risk warning to a memory management unit of the mass storage device;
issuing a copy command to copy the data at the address to a different address on the NAND flash memory device; and
updating a file index of the mass storage device to reflect the different address of the data.
2 . The method of claim 1 , wherein the risk index is further calculated based on the number of read accesses of the data at the address.
3 . The method of claims 1 , wherein the risk index is further calculated based on the number of corrected bits on each read of the data at the address.
4 . The method of claims 1 , wherein the risk index is further calculated based on the temperature history of the NAND flash memory device.
5 . The method of claim 1 , wherein the logging and calculating steps are performed at system level of a system containing the mass storage device.
6 . The method of claim 1 , wherein all steps of the method are performed on the mass storage device and independent of a system containing the mass storage device.
7 . A method of increasing reliability of at least one NAND flash memory device of a mass storage device, the method comprising:
logging timestamps of data writes to first addresses of the NAND flash memory device;
logging the number of read accesses of the data at the first addresses;
calculating a primary risk index based on the age of the data at the first address;
logging additional addresses of additional writes to the NAND flash memory device;
generating a proximity value based on spatial relations between the first addresses and the additional addresses;
generating a risk level map based on the proximity value;
generating a secondary risk index of the data at the first address by combining the primary risk index with the risk level map;
generating a risk warning if the secondary risk index exceeds a predefined threshold;
communicating the risk warning to a memory management unit of the mass storage device;
issuing a copy command to copy the data at the first address to a different address on the NAND flash memory device; and
updating a file index of the mass storage device to reflect the different address of the data.
8 . The method of claim 7 , wherein the primary risk index is further calculated based on the number of read accesses of the data at the first address.
9 . The method of claims 7 , wherein the primary risk index is further calculated based on the number of corrected bits on each read of the data at the first address.
10 . The method of claim 7 , wherein the primary risk index is further calculated based on the number of erase cycles on each of the data at the first address.
11 . The method of claims 7 , wherein the primary risk index is further calculated based on the temperature history of the NAND flash memory device.
12 . The method of claim 7 , wherein the logging and calculating steps are performed at system level of a system containing the mass storage device.
13 . The method of claim 7 , wherein all steps of the method are performed on the mass storage device and independent of a system containing the mass storage device.
14 . A computer system configured to increase reliability of at least one NAND flash memory device of a mass storage device of the system, the system comprising:
means for logging timestamps of data writes to addresses of the NAND flash memory device;
means for logging the number of read accesses of the data at the addresses;
means for calculating a risk index based on the age of the data at the address;
means for generating a risk warning if the risk index of the data at the address exceeds a predefined threshold;
means for communicating the risk warning to a memory management unit of the mass storage device;
means for issuing a copy command to copy the data at the address to a different address on the NAND flash memory device; and
means for updating a file index of the mass storage device to reflect the different address of the data.
15 . The computer system of claim 14 , wherein the calculating means further calculates the risk index based on the number of read accesses of the data at the address.
16 . The computer system of claim 14 , wherein the calculating means further calculates the risk index based on the number of corrected bits on each read of the data at the address.
17 . The computer system of claim 14 , wherein the calculating means further calculates the risk index based on the temperature history of the NAND flash memory device.
18 . The computer system of claim 14 , wherein the logging and calculating means are performed by components of the system apart from the mass storage device.
19 . The computer system of claim 14 , wherein the logging means, calculating means, generating means, communicating means, issuing means, and updating means are performed by components of the mass storage device.
20 . The mass storage device of claim 19 .