High frequency device
View Patent ↗A high frequency device having a membrane structure with improved mechanical strength is provided. The high frequency device includes: a substrate having an aperture; a first dielectric layer that is formed from a material having etching selectivity in relation to a material of the substrate and is provided on the substrate to cover the aperture; a second dielectric layer on the first dielectric layer; and a high frequency element provided in a position opposed to the aperture on the second dielectric layer.
1. A high frequency device comprising:
a substrate having an aperture;
a first dielectric layer that is formed from a material having etching selectivity in relation to a material of the substrate and is provided on the substrate to cover the aperture;
a second dielectric layer on the first dielectric layer;
a high frequency element provided in a position opposed to the aperture on the second dielectric layer; and
a reinforced structure for the first dielectric layer and the second dielectric layer in the substrate.
2. The high frequency device according to claim 1 , wherein the reinforced structure is in the aperture of the substrate.
3. The high frequency device according to claim 1 , wherein the reinforced structure is integrated with the substrate, and has a pattern dividing inside of the aperture into a plurality of regions.
4. The high frequency device according to claim 1 , wherein the high frequency element is an inductor, an antenna, a capacitor, or a transmission line.
5. The high frequency device according to claim 4 , wherein the high frequency element is the inductor, and the reinforced structure has a radial pattern that divides inside of the aperture from a center thereof into a plurality of regions.
6. The high frequency device according to claim 4 , wherein the high frequency element is the antenna having a linear radiating element, and the reinforced structure has a pattern perpendicular to a longitudinal direction of the radiating element.
7. The high frequency device according to claim 1 , wherein the substrate is formed from a conductive material.
8. The high frequency device according to claim 1 , wherein the second dielectric layer is formed from an organic material.
9. The high frequency device according to claim 8 , wherein the organic material is BCB, parylene, or polyimide.
10. The high frequency device according to claim 1 , wherein the first dielectric layer is formed from an inorganic material.
11. The high frequency device according to claim 10 , wherein the inorganic material is silicon oxide or silicon nitride.
12. A high frequency device comprising:
a substrate having an aperture;
a dielectric layer provided on the substrate to cover the aperture;
a high frequency element provided in a position opposed to the aperture on the dielectric layer; and
a reinforced structure for the dielectric layer that is integrated with the substrate, and has a pattern dividing inside of the aperture into a plurality of regions.
13. The high frequency device according to claim 12 , wherein the high frequency element is an inductor, an antenna, a capacitor, or a transmission line.
14. The high frequency device according to claim 12 , wherein the high frequency element is an inductor, and the reinforced structure has a radial pattern that divides inside of the aperture from a center thereof into a plurality of regions.
15. The high frequency device according to claim 12 , wherein the high frequency element is an antenna having a linear radiating element, and the reinforced structure has a pattern perpendicular to a longitudinal direction of the radiating element.
16. The high frequency device according to claim 12 , wherein the substrate is formed from a conductive material.
17. The high frequency device according to claim 12 , wherein the second dielectric layer is formed from an organic material.
18. The high frequency device according to claim 17 , wherein the organic material is BCB, parylene, or polyimide.
19. The high frequency device according to claim 12 , wherein the first dielectric layer is formed from an inorganic material.
20. The high frequency device according to claim 19 , wherein the inorganic material is silicon oxide or silicon nitride.