Method of forming nanocomposite solution, and nanocomposite photovoltaic device
View Patent ↗Provided is a method of forming a nanocomposite solution, and a nanocomposite photovoltaic device. In the method, a metal oxide nanorod solution is prepared and a nanoparticle solution is prepared. The metal oxide nanorod solution and the nanoparticle solution are mixed to form a nanocomposite solution.
1. A method of forming a nanocomposite solution, comprising:
i) preparing a metal oxide nanorod solution, wherein the preparing of the metal oxide nanorod solution comprises:
preparing a metal oxide precursor solution,
preparing an alcohol-based solution including a basic chemical species,
mixing/reacting the metal oxide precursor solution and the alcohol-based, solution to form a metal oxide nanorod, and
applying an ultrasonic wave or an electromagnetic wave after mixing the metal oxide precursor solution and the alcohol-based solution;
ii) preparing a nanoparticle solution, wherein the preparing of the nanoparticle solution comprises:
mechanically grinding a target material to form primary particles,
etching the primary particles with an etchant to form an intermediate, solution including secondary particles,
removing a supernatant from the intermediate solution through a centrifugation process to form a purification solution, and diluting the purification solution with a dispersive solvent; and
iii) mixing the metal oxide nanorod solution and the nanoparticle solution to form a nanocomposite solution.
2. The method of claim 1 , wherein the metal oxide precursor solution comprises zinc acetate (Zn(C 2 H 3 O 2 ) 2 ).
3. The method of claim 1 , wherein the alcohol-based solution is prepared by reacting potassium hydroxide (KOH) and methanol (CH 3 OH).
4. The method of claim 1 , wherein the metal oxide nanorod comprises a zinc oxide nanorod.
5. The method of claim 1 , wherein the metal oxide nanorod comprises tin oxide (SnO 2 ), indium oxide (In 2 O 3 ), or titanium oxide (TiO 2 ).
6. The method of claim 1 , wherein the metal oxide nanorod has a length of about 50 nm to about 200 nm.
7. The method of claim 1 , wherein the etchant comprises nitric acid, hydrofluoric acid, and water.
8. The method of claim 7 , wherein the nitric acid, the fluoric acid and the water have a mass ratio of 50:5:50.
9. The method of claim 1 , wherein the dispersive solvent comprises isopropyl alcohol (IPA) or methanol.
10. The method of claim 1 , wherein the target material comprises silicon.
11. The method of claim 1 , wherein the target material comprises aurum, argentum, gallium arsenide, indium arsenide, cadmium selenide, or zinc selenide.