IP Library Granted Patent US 8,222,062
Granted Patent B2
US 8,222,062 · App. 12/860,913 · Granted Jul 17, 2012

Method for fabricating a flexible display device

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Quick Facts
Patent No.
US 8,222,062
App. No.
12/860,913
Granted
Jul 17, 2012
Kind
B2
Abstract

A method for fabricating a flexible display device includes providing a carrier substrate, forming a sacrificial layer on the carrier substrate, forming a metal layer and a buffer layer on the sacrificial layer in that order, forming at least one active device on the buffer layer, and separating the metal layer and the carrier substrate by laser treatment.

Claims (22)

1. A method for fabricating a flexible display device, comprising:

providing a carrier substrate with a first surface;

forming a sacrificial layer, containing amorphous silicon, on said first surface of the carrier substrate via chemical vapor deposition;

forming a metal layer and a buffer layer on the sacrificial layer in that order;

forming at least one active device on the buffer layer, and

separating the metal layer and the carrier substrate by a laser treatment.

2. The method of claim 1 , wherein the carrier substrate is a transparent substrate.

3. The method of claim 1 , wherein the chemical vapor deposition process comprises adding silane and hydrogen to the sacrificial layer.

4. The method of claim 1 , further comprising performing hydrogen ion implantation after the chemical vapor deposition process to increase the content of hydrogen in the sacrificial layer.

5. The method of claim 1 , further comprising performing a hydrogen ion plasma treatment after the chemical vapor deposition process to increase the content of the hydrogen in the sacrificial layer.

6. The method of claim 1 , wherein a thickness of the sacrificial layer is less than 500 Å.

7. The method of claim 1 , wherein the metal layer comprises stainless steel.

8. The method of claim 7 , wherein the metal layer is formed on the sacrificial layer via sputtering or silver paste coating.

9. The method of claim 1 , wherein a thickness of the metal layer is less than 2 .mu.m.

10. The method of claim 1 , wherein the buffer layer comprises organic or inorganic materials.

11. The method of claim 1 , wherein the laser treatment is a XeCl excimer laser treatment.

12. A method for fabricating a flexible display device, comprising:

providing a carrier substrate;

forming a sacrificial layer on the carrier substrate, the sacrificial layer comprising amorphous silicon;

forming a metal layer and a buffer layer on the sacrificial layer in that order:

forming at least one active device on the buffer layer, and

separating the metal layer and the carrier substrate by a laser treatment wherein the amorphous silicon is changed to polysilicon after the laser treatment.

Assignments (1)
CHANGE OF NAME Recorded Apr 7, 2014
From: CHIMEI INNOLUX CORPORATION
To: INNOLUX CORPORATION
Reel/Frame 032621/0718 →