IP Library Granted Patent US 7,891,566
Granted Patent B2
US 7,891,566 · App. 12/861,114 · Granted Feb 22, 2011

Card and host device

Assignee: Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 7,891,566
App. No.
12/861,114
Granted
Feb 22, 2011
Kind
B2
Abstract

A host device is configured to read and write information from and into a card and to supply a supply voltage that belongs to a first voltage range or a second voltage range which is lower than the first voltage range, and issues a voltage identification command to the card. The voltage identification command includes a voltage range identification section, an error detection section, and a check pattern section. The voltage range identification section includes information indicating which one of the first voltage range and the second voltage range the supply voltage belongs. The error detection section has a pattern configured to enable the card which has received the voltage identification command to detect errors in the voltage identification command. The check pattern section has a preset pattern.

Claims (30)

1. A memory device comprising:

a memory which stores information and a controller to control the memory, the memory device supporting a small capacity format or a large capacity format which allows for storing larger information than the small capacity format, and the memory device being configured to recognize a voltage identification command which includes a voltage range identification section, an error detection section, and a check pattern section, wherein

the voltage range identification section of the voltage identification command has a pattern indicating a range of supply voltage supplied by a host device which issues the voltage identification command,

the memory device issues a response which includes a voltage range identification section and an error detection section or a check pattern section in response to the voltage identification command,

the voltage range identification section of the response has a pattern which indicates the same voltage range as the range of the supply voltage when the memory device is operable with the supply voltage,

the error detection section of the response has a pattern configured to enable the host device which has received the response to detect errors in the response,

initialization of the memory device is allowed when the voltage range identification section of the response has the same pattern as a pattern of the voltage range identification section of the voltage identification command, and

initialization of the memory device is prohibited when the voltage range identification section of the response has a pattern different from a pattern of the voltage range identification section of the voltage identification command.

2. The memory device according to claim 1 , wherein

the memory device is configured to recognize a command which is issued by the host device when the voltage range identification section of the response has the same pattern as a pattern of the voltage range identification section of the voltage identification command, which instructs initialization of the memory device, and which includes a capacity identification section which has a pattern which indicates whether the host device supports only the small capacity format or both the small capacity format and the large capacity format.

3. The memory device according to claim 2 , wherein

the memory device supports the large capacity format, and

the memory device cancels the initialization of the memory device when that only the small capacity format is supported is indicated in the capacity identification section of the command which instructs initialization received by the memory device.

4. A memory device comprising:

a memory which stores information and a controller to control the memory, the memory device supporting a small capacity format or a large capacity format which allows for storing larger information than the small capacity format, wherein

the memory device is configured to recognize a voltage identification command which includes a voltage range identification section which has a pattern indicating a range of supply voltage supplied by a host device which issues the voltage identification command,

initialization of the memory device is allowed when the memory device issues a response which includes a voltage range identification section which has the same pattern as a pattern of the voltage range identification section of the voltage identification command in response to the voltage identification command when the memory device is operable with the supply voltage,

initialization of the memory device is prohibited when the voltage range identification section of the response has a pattern different from a pattern of the voltage range identification section of the voltage identification command, and

the memory device is configured to recognize a command which is issued by the host device when the voltage range identification section of the response has the same pattern as a pattern of the voltage range identification section of the voltage identification command, which instructs initialization of the memory device, and which includes a capacity identification section which has a pattern which indicates whether the host device supports only the small capacity format or both the small capacity format and the large capacity format.

5. The memory device according to claim 4 , wherein

the memory device supports the large capacity format, and

the memory device cancels the initialization of the memory device when that only the small capacity format is supported is indicated in the capacity identification section of the command which instructs initialization received by the memory device.

6. A host device configured to read and write information from and into a memory device and configured to issue to the memory device a voltage identification command which includes a voltage range identification section, an error detection section, and a check pattern section, wherein

the voltage range identification section includes a pattern indicating a range of supply voltage supplied by the host device,

the error detection section has a pattern configured to enable the memory device which has received the voltage identification command to detect errors in the voltage identification command,

the check pattern section has a preset pattern,

the host device initializes the memory device when the host device receives a response which includes a voltage identification section which has a pattern which indicates the same voltage range as the range of the supply voltage from the memory device in response to the voltage identification command; and

the host device cancels initialization of the memory device when the voltage range identification section of the response has a pattern different from the pattern of the voltage range identification section of the voltage identification command.

7. The host device according to claim 6 , wherein

the host device is configured to issue a command which instructs initialization of the memory device and includes a capacity identification section which has a pattern which indicates whether the host device supports only a small capacity format or both the small capacity format and a large capacity format when the voltage range identification section of the response has the same pattern as a pattern of the voltage range identification section of the voltage identification command.

Assignments (4)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043328/0388 →
Priority Claims (1)
JP PCT/JP2004/017627 · Nov 26, 2004 · national
Continuity (5)
Continuation 12468886 · May 20, 2009
Continuation 12043005 · Mar 5, 2008
Continuation 11553002 · Oct 26, 2006
Continuation PCTJP2005021689 · Nov 25, 2005
Related Publication 20100322017A1 · Dec 23, 2010